Results 171 to 180 of about 2,229,398 (285)

Atomic‐Scale Mechanisms of Anisotropic Thermal Decomposition in GeSn Alloys With Stepwise Pinning

open access: yesAdvanced Electronic Materials, EarlyView.
Combining in situ TEM with DFT calculations, this work elucidates atomic‐scale anisotropic thermal decomposition in GeSn films, identifying laminar receding in defect‐free regions and stepwise pinning at stacking faults. Driven by crystallographic anisotropy and defect‐mediated energetic penalties, these findings establish a physical framework for ...
YiXin Wang   +6 more
wiley   +1 more source

Strategies and Challenges in Memristor‐Selector Integration for High‐Density Memory and Compute‐in‐Memory Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi   +3 more
wiley   +1 more source

Evaluation of a family-focused intervention to promote adolescent mental health and family relationships (phase 3 of MOST): protocol for a randomised controlled trial. [PDF]

open access: yesBMJ Open
Mueller J   +15 more
europepmc   +1 more source

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte   +9 more
wiley   +1 more source

Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation

open access: yesAdvanced Electronic Materials, EarlyView.
Wire resistance and sneak paths severely compromise the performance of large memristor crossbars. A predictive closed‐form distributed line‐resistance model, combined with a fourmatrix geometry‐averaging algorithm, eliminates these parasitic limitations.
Davide Rossetti   +5 more
wiley   +1 more source

Smart Exploration of Perovskite Photovoltaics: From AI Driven Discovery to Autonomous Laboratories

open access: yesAdvanced Energy Materials, EarlyView.
In this review, we summarize the fundamentals of AI in automated materials science, and review AI applications in perovskite solar cells. Then, we sum up recent progress in AI‐guided manufacturing optimization, and highlight AI‐driven high‐throughput and autonomous laboratories.
Wenning Chen   +4 more
wiley   +1 more source

Machine Learning Interatomic Potentials for Energy Materials: Architectures, Training Strategies, and Applications

open access: yesAdvanced Energy Materials, EarlyView.
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park   +19 more
wiley   +1 more source

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