Results 171 to 180 of about 152,871 (318)

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

The imperative to embed ethics in health research priority-setting. [PDF]

Bull World Health Organ
Millum J, Aguilera B, Bhaumik S, Galvagni E, Littler K, Munung NS, Pierson L, Pratt B.   +7 more
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

The Strong Get Stronger: The Matthew Effect in Academic Publishing. [PDF]

Balkan Med J
Korkmaz S, Altay S.
europepmc   +1 more source

Millisecond‐Scale Relaxation in Metastable HZO Ferroelectric Capacitors for Bio‐Inspired Temporal Computing

Advanced Electronic Materials, EarlyView.
Through the introduction of a niobium oxide layer into a hafnia ferroelectric capacitor stack, we build a memory device with a strong imprint effect. This imprint leads to a millisecond retention loss that can be tuned by the programming conditions that can be utilized as a scalable, analog hardware time constant for bio‐inspired temporal computing ...
Luca Fehlings, Thomas Mikolajick, Beatriz Noheda, Erika Covi   +3 more
wiley   +1 more source

Gender Auditing in a Capability Approach [PDF]

Feminist studies have developed several tools to assess the gender impact of public policy and, in particular, of public budgets. We introduce an innovative approach to gender auditing of public budgets inspired by the capability approach.
Diego Lanzi, Antonella Picchio, Tindara Addabbo   +2 more
core  

The WHO costing and budgeting tool for national action plans on antimicrobial resistance-a review and assessment of impact in Africa. [PDF]

JAC Antimicrob Resist
Mazengiya YD, Gahimbare L, Judith A, Patriarchi A, Verboom P, Fuller W, Ahmed YA.   +6 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

A comparative study of simulation-based inference methods for epidemic models with identifiability considerations. [PDF]

PLoS Comput Biol
Jang G, Candan KS, Chowell G.
europepmc   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, EarlyView.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source