Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Scanning Tunneling Microscopy for Molecules: Manipulating Electron Transport through the Conduction Gap by Varying the Buffer Layer. [PDF]
Grewal A, Leon CC, Gunnarsson O.
europepmc +1 more source
The Investigation of the Influence of a Cu2O Buffer Layer on Hole Transport Layers in MAPbI3-Based Perovskite Solar Cells. [PDF]
Lin C +9 more
europepmc +1 more source
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah +7 more
wiley +1 more source
Diffusion-Driven Targeted Passivation of Selenium Vacancies via an I-Doped CdS Buffer Layer for Efficient Sb<sub>2</sub>Se<sub>3</sub> Solar Cells. [PDF]
Shen L +6 more
europepmc +1 more source
Low-Temperature UVO-Sintered ZnO/SnO2 as Robust Cathode Buffer Layer for Ternary Organic Solar Cells. [PDF]
Zou Z +8 more
europepmc +1 more source
Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee +10 more
wiley +1 more source
Advancing Solar Cell Efficiency: Experimental and Numerical Analysis of Mn-Doped ZnS as a Buffer Layer. [PDF]
Talbi A +6 more
europepmc +1 more source
A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances. [PDF]
Guo J +6 more
europepmc +1 more source
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source

