Results 251 to 260 of about 2,387,804 (309)
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On buffering schemes for long multi-layer nets
17th International Conference on VLSI Design. Proceedings., 2004We consider the problem of minimizing the delay in signal transmission over point-to-point connections across multiple metal layers in a VLSI circuit. We present an exact solution for the two layer case. This exact solution, however, is irregular and dependent on the length of the net.
PRASAD, V, DESAI, MP
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GaP layers grown on GaN with and without buffer layers
Chinese Physics B, 2010The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has been studied. Results indicate that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature (HT) GaP growth.
Li Shu-Ti +5 more
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Formation of Photovoltaic Buffer Layers by Atomic Layer Deposition
ECS Meeting Abstracts, 2009Abstract not Available.
Jonathan R. Bakke, Stacey F. Bent
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Thick GaN layers on sapphire with various buffer layers
Crystal Research and Technology, 2007AbstractThick GaN layers deposited in HVPE system on composite substrates made on sapphire substrates in Metalorganic Vapour Phase Epitaxy (MOVPE) system have been investigated. The following substrates were used: (00.1) sapphire substrates with AlN, AlN/GaN and GaN thin layers.
R. Korbutowicz +2 more
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Epitaxial growth of GaN layers with double-buffer layers
Journal of Crystal Growth, 1998We report on metalorganic vapor phase epitaxy of GaN layers on newly developed double-buffer layers (DBLs). The DBLs consist of two GaN layers deposited successively at different temperature T 1 and T 2 . Photoluminescence and Raman scattering spectra exhibit that the epilayers obtained in this fashion are higher in crystal quality than those grown on
K Uchida, K Nishida, M Kondo, H Munekata
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Optimization of buffer layer/i-layer band alignment
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015We investigate how conduction band offset between the buffer and the i-layer of Cu(InGa)Se2 solar cells affects their performance. Employing SCAPS simulations, we explore two specific cases with either a CdS buffer or an alternative Zn(OS) buffer of a higher conduction band energy.
Yukari Inoue +4 more
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Fabrication and application of relaxed buffer layers
Materials Science and Engineering: B, 1995Abstract Principles involved in the fabrication of compositionally graded, relaxed buffer layers with low threading dislocation densities are discussed. It is recognized that two key elements are important in controlling the kinetics of lattice relaxation.
Y.H. Xie +2 more
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Lightwave coupler utilizing a tapered buffer layer
Applied Optics, 1988We discuss the performance of a lightwave coupler utilizing a tapered buffer layer. The coupler with a ridge waveguide is fabricated on a glass substrate and high coupling efficiencies of 75% and 50% are measured for the operations of coupling from the waveguide to a light beam and from the laser beam into the waveguide, respectively.
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