Results 111 to 120 of about 7,475 (195)

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Material Analysis of Early Medieval Woven Bands from Gródek upon the Bug River and Pień, Poland. [PDF]

open access: yesMaterials (Basel)
Cybulska M   +5 more
europepmc   +1 more source

Printed Flexible WO3‐Based Supercapacitors for Powering Low‐Powered Electronics in Wearable Devices and Energy Autonomous Temperature Monitoring

open access: yesAdvanced Electronic Materials, EarlyView.
This study represents one of the systematic demonstrations of a screen‐printed, flexible WO3‐based supercapacitor, exhibiting excellent charge‐storage performance for powering wearable electronics. The device shows a specific capacitance of 3.44 F g−1 and an energy density of 0.302 Wh kg−1 at 0.05 mA, which enable to operate multiple wearable ...
Jithin Kanathedath   +6 more
wiley   +1 more source

Double stochastic resonance in stink bug sexual communication. [PDF]

open access: yesSci Rep
Curcio L   +8 more
europepmc   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

open access: yesAdvanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg   +7 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

open access: yesAdvanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini   +9 more
wiley   +1 more source

Eco‐Friendly Laser‐Induced Graphene/Perovskite Hybrids for Eco‐Friendly Photodetectors

open access: yesAdvanced Electronic Materials, EarlyView.
A sustainable paper‐based photodetector was developed by combining laser‐induced graphene (LIG) with MAPbI3 perovskite. Compared with pure LIG devices, the hybrid photodetector exhibited nearly 10‐fold higher responsivity and 7‐fold greater detectivity while maintaining stable performance after 1000 bending cycles, demonstrating its potential for ...
Ya‐Yun Huang   +3 more
wiley   +1 more source

Atomic Scale Control of Thermal Conductivity in LaMnO3/SrMnO3 Superlattices

open access: yesAdvanced Electronic Materials, EarlyView.
Interface‐dominated cross‐plane thermal transport in [(LaMnO3)m/(SrMnO3)n]10 superlattices can be controlled by the octahedral rotation/tilt angle φOOR of the MnO6 octahedra, which as well is controlled by the “m/n” ratio. ABSTRACT We report atomic scale structure and phonon thermal transport in (LaMnO3)m/(SrMnO3)n/SrTiO3(100) superlattices (LMO/SMO ...
H. Ulrichs   +12 more
wiley   +1 more source

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