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Bulk-Driven CMOS Amplifier With High EMI Immunity
IEEE Transactions on Electromagnetic Compatibility, 2015This paper presents a bulk-driven CMOS amplifier with high immunity to electromagnetic interference (EMI). The approach is based on a bulk-driven input stage of MOSFET, thereby providing a low-voltage realization of a gate-driven stage. The bulk-driven amplifier includes the positive feedback, an input voltage drop, and dual input-stage symmetrical ...
Hong Ge Li +3 more
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Low-voltage bulk-driven rectifier for biomedical applications
Microelectronics Journal, 2013This paper introduces the novel design of a low-voltage low-power voltage rectifier based on bulk-driven (BD) winner-take-all (WTA) circuit. The proposed circuit is able to work as a half- or full-wave rectifier and it is specifically designed for battery-powered implantable and wearable medical devices.
Fabian Khateb, Spyridon Vlassis
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Design of bulk driven miller Operational Transconductance Amplifier
2015 International Conference on Industrial Instrumentation and Control (ICIC), 2015This paper presents a simple technique to enhance the gain of Operational Transconductance Amplifier (OTA) operating at a low voltage. In conventional OTA, bulk driven differential pair is used for low voltage operation. However, it introduces a reduction in the g mb /g m ratio. The gain of OTA can be enhanced by increasing its transconductance.
Kavita Bhange, Pravin Zode, Pradnya Zode
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Bulk-driven class AB fully-balanced differential difference amplifier
Analog Integrated Circuits and Signal Processing, 2017This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range under low supply voltage.
Fabian Khateb +3 more
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0.5‐V bulk‐driven OTA and its applications
International Journal of Circuit Theory and Applications, 2013SummaryA new 0.5‐V bulk‐driven operational transconductance amplifier (OTA), designed in 50 nm CMOS technology, is presented in the paper. The circuit is characterized by improved linearity and dynamic range obtained for MOS devices operating in moderate inversion region.
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