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Location-controlled-grain Technique for Monolithic 3D BEOL FinFET Circuits
International Electron Devices Meeting, 2018A location-controlled-grain technique is presented for fabricating BEOL monolithic 3D FinFET ICs over SiO2. The grain-boundary free Si FinFETs thus fabricated exhibit steep sub-threshold swing (106).
Chih-Chao Yang +11 more
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Non-Volatile RRAM Embedded into 22FFL FinFET Technology
Symposium on VLSI Technology, 2019This paper presents key specifications of RRAM-based nonvolatile memory embedded into Intel 22FFL FinFET Technology. 22FFL is a high performance, ultra low power technology developed for mobile and RF applications providing extensive high voltage and ...
O. Golonzka +34 more
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A Built-in Self-Test Scheme for Detecting Defects in FinFET-Based SRAM Circuit
Asian Test Symposium, 2018FinFET is a feasible solution to short-channel effects that has been encountered by planar transistors during process scaling, and is widely adopted in advanced CMOS technologies.
Meng-Chi Chen +2 more
semanticscholar +1 more source
Sub-60mV-swing negative-capacitance FinFET without hysteresis
International Electron Devices Meeting, 2015Kai-Shin Li +15 more
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Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond
Nature Electronics, 2018Chi-Chun Liu +12 more
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A 16-nm FinFET 28.8-mW 800-MHz 8-Bit All-N-Transistor Logic Carry Look-Ahead Adder
Circuits, systems, and signal processing, 2022Chua-Chin Wang +5 more
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TMD FinFET with 4 nm thin body and back gate control for future low power technology
International Electron Devices Meeting, 2015Min-Cheng Chen +21 more
semanticscholar +1 more source
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 2004
Fu-Liang Yang +25 more
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Fu-Liang Yang +25 more
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