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Novel Smoothing Capacitor-less ARCP Scheme Soft Switching Inverter
IEEJ Transactions on Industry Applications, 2010The novel ARCP scheme soft switching inverter without smoothing capacitor in the input DC voltage side is proposed in this paper. The proposed ARCP soft switching inverter can achieve the zero voltage soft switching transition in the main switch, and the zero current soft switching transition in the additional auxiliary switch, in the same way as the ...
Masayoshi Yamamoto +2 more
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A Novel Capacitor-less 2-T SOI DRAM Cell
2007 International Semiconductor Device Research Symposium, 2007The capacitor in conventional 1T/1C DRAM cell accounts for large area and can hardly be realized by SOI technology. This cell can operate in low voltage, but needs super shallow junction, which is difficult to realize in process and not suitable for scaling down.
null Guohe Zhang +2 more
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Capacitor-Less Photovoltaic Cell-Level Power Balancing using Diffusion Charge Redistribution
IEEE Transactions on Power Electronics, 2014This paper presents a new strategy, diffusion charge redistribution (DCR), for balancing power among photovoltaic cells to increase energy extraction and to improve maximum power-point tracking (MPPT) efficiency under partial shading conditions. With DCR, testing and binning during cell manufacturing can be eliminated and significant cost savings can ...
Arthur H. Chang +2 more
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Electrolytic Capacitor-Less Multilevel Inverter with AC-DC Energy Conversion
2019 IEEE 4th International Future Energy Electronics Conference (IFEEC), 2019This paper references the multilevel inverter topology developed by the graduates of the laboratory to achieve AC-DC energy conversion without increasing or decreasing components. Using TMS320F28035 digital signal processor (DSP), which is produced by TI, to control switch and realizes bidirectional multilevel inverter.
Guo-Kai Wu, Ke-Sin Su, Jiann-Fuh Chen
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Reliability study in capacitor less 1T-RAM cells on SOI
2010 IEEE International SOI Conference (SOI), 2010We have shown that careful optimization of the write conditions is needed in order to achieve the stringent endurance spec of 1016 cycles for 1T-RAM cells without compromising the sense margin and retention. The degradation seen during cycling of the cells can be attributed to the creation of interface states and carrier trapping at either the source (“
M. Aoulaiche +10 more
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Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanism
NanotechnologyAbstract In this paper, we propose a doping- and capacitor-less 1T-DRAM cell, which achieved virtual doping by leveraging charge plasma and bias-induced electrostatic doping (bias-ED) techniques in a 5 nm-thick intrinsic silicon body, thereby eliminating doping processes.
Yuna Suh, Doohyeok Lim
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Towards InGaAs MSDRAM Capacitor-Less Cells
ECS Transactions, 2018Carlos Navarro +7 more
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Electrolytic-capacitor-less high-power LED driver
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2014Yajie Qiu +5 more
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Electrolytic capacitor-less AC/DC LED driver
2013 International Conference on Renewable Energy and Sustainable Energy (ICRESE), 2013R. S. Snehasree, A. Immanuel Selvakumar
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A Survey Paper on Capacitor Less Low Dropout Regulator
2022 International Conference on Electrical, Computer and Energy Technologies (ICECET), 2022Maliha Naaz +2 more
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