Results 1 to 10 of about 604 (114)

An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process

open access: yesIEEE Access, 2021
As the technology node of the dynamic random-access memory (DRAM) continues to decrease below the 10-nm-class, bit-cell failures due to the external environments have increased.
Ki Chul, Sungho Kang, Kyomin Sohn
exaly   +3 more sources

Performance Analysis Of SRAM and Dram in Low Power Application [PDF]

open access: yesE3S Web of Conferences, 2023
All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S.   +5 more
doaj   +1 more source

EnforceSNN: Enabling resilient and energy-efficient spiking neural network inference considering approximate DRAMs for embedded systems

open access: yesFrontiers in Neuroscience, 2022
Spiking Neural Networks (SNNs) have shown capabilities of achieving high accuracy under unsupervised settings and low operational power/energy due to their bio-plausible computations.
Rachmad Vidya Wicaksana Putra   +2 more
doaj   +1 more source

Performance evaluation of SRAM design using different field effect transistors [PDF]

open access: yesE3S Web of Conferences, 2023
SRAM (Static Random Access Memory) is one of the type of memory which holds the data bit without periodic refreshment. Compared with DRAM (Dynamic Random Access Memory) which requires periodic refreshment of data bit stored in it.
C. Venkataiah   +5 more
doaj   +1 more source

CYBER SECURITY IN INDUSTRIAL CONTROL SYSTEMS (ICS): A SURVEY OF ROWHAMMER VULNERABILITY [PDF]

open access: yesApplied Computer Science, 2022
Increasing dependence on Information and Communication Technologies (ICT) and especially on the Internet in Industrial Control Systems (ICS) has made these systems the primary target of cyber-attacks.
Hakan AYDIN , Ahmet SERTBAŞ
doaj   +1 more source

DRAM Retention Behavior with Accelerated Aging in Commercial Chips

open access: yesApplied Sciences, 2022
The cells in dynamic random access memory (DRAM) degrade over time as a result of aging, leading to poor performance and potential security vulnerabilities.
Md Kawser Bepary   +2 more
doaj   +1 more source

Serum starvation induces DRAM expression in liver cancer cells via histone modifications within its promoter locus. [PDF]

open access: yesPLoS ONE, 2012
DRAM is a lysosomal membrane protein and is critical for p53-mediated autophagy and apoptosis. DRAM has a potential tumor-suppressive function and is downregulated in many human cancers.
Peihua Ni   +8 more
doaj   +1 more source

An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution

open access: yesIEEE Journal of the Electron Devices Society, 2018
This paper is the first to propose an innovative method for measuring variations in dynamic random access memory (DRAM) cell transistors. Structural dispersion induces an extremely high cell leakage current, which determines aspects of DRAM performance ...
Min Hee Cho   +7 more
doaj   +1 more source

Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies

open access: yesJournal of Microelectronic Manufacturing, 2020
This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization (DTCO) of advanced semiconductor memories. After reviewing the DTCO approach to semiconductor devices scaling, we introduce a multi-stage simulation flow to study ...
Salvatore M. Amoroso   +9 more
doaj   +1 more source

OBET: On-the-Fly Byte-Level Error Tracking for Correcting and Detecting Faults in Unreliable DRAM Systems

open access: yesSensors, 2021
With technology scaling, maintaining the reliability of dynamic random-access memory (DRAM) has become more challenging. Therefore, on-die error correction codes have been introduced to accommodate reliability issues in DDR5.
Duy-Thanh Nguyen   +3 more
doaj   +1 more source

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