Results 31 to 40 of about 604 (114)
Advanced Materials, EarlyView.Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam +7 more
wiley +1 more source
DRAM triggers lysosomal membrane permeabilization and cell death in CD4(+) T cells infected with HIV. [PDF]
PLoS Pathogens, 2013 Productive HIV infection of CD4(+) T cells leads to a caspase-independent cell death pathway associated with lysosomal membrane permeabilization (LMP) and cathepsin release, resulting in mitochondrial outer membrane permeabilization (MOMP).
Mireille Laforge +9 more
doaj +1 more source
Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage
Micromachines, 2021 With the downscaling in device sizes, process-induced parameter variation has emerged as one of the most serious problems. In particular, the parameter fluctuation of the dynamic random access memory (DRAM) sense amplifiers causes an offset voltage ...
Kyung Min Koo +4 more
doaj +1 more source
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Advanced Materials Interfaces, EarlyView.Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source
Angewandte Chemie, EarlyView.Discovery of polymorphism in solid tris(p‐tolyl)antimony(III) highlighted short, direct antimony‐antimony contacts, with interatomic separation shorter than the sum of the van der Waals radii, and calculated interaction energy of ca. 26 kJ mol−1 that includes a significant dispersion component.
Imogen Suh +12 more
wiley +2 more sources
Advanced Materials Technologies, EarlyView.The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee +4 more
wiley +1 more source
Rethinking the Producer-Consumer Relationship in Modern DRAM-Based Systems
IEEE AccessGenerational improvements to commodity DRAM throughout half a century have long solidified its prevalence as main memory across the computing industry. However, overcoming today’s DRAM technology scaling challenges requires new solutions driven by
Minesh Patel +6 more
doaj +1 more source
Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review
Advanced Science, EarlyView.Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh +8 more
wiley +1 more source
Advanced Science, EarlyView.HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
IEEE Access, 2023 DRAM scalability is becoming a limiting factor to the available memory capacity in consumer devices. As a potential solution, manufacturers have introduced emerging non-volatile memories (NVMs) into the market, which can be used to increase the memory ...
Geraldo F. Oliveira +10 more
doaj +1 more source