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DRAM Retention Behavior with Accelerated Aging in Commercial Chips

open access: yesApplied Sciences (Switzerland), 2022
The cells in dynamic random access memory (DRAM) degrade over time as a result of aging, leading to poor performance and potential security vulnerabilities.
Md Kawser Bepary   +2 more
exaly   +4 more sources

An Experimental Analysis of RowHammer in HBM2 DRAM Chips

open access: yes2023 53rd Annual IEEE/IFIP International Conference on Dependable Systems and Networks - Supplemental Volume (DSN-S), 2023
To appear at DSN Disrupt ...
Ataberk Olgun   +2 more
exaly   +3 more sources

Ultra-wide-field imaging Mueller matrix spectroscopic ellipsometry for semiconductor metrology [PDF]

open access: yesNature Communications
We propose an ultra-wide-field imaging Mueller matrix spectroscopic ellipsometry (IMMSE) system for semiconductor metrology. The IMMSE system achieves large-area measurements with a 20 mm × 20 mm field of view (FOV)—the largest FOV reported to date—and a
Juntaek Oh   +14 more
doaj   +2 more sources

DRAM Bender: An Extensible and Versatile FPGA-Based Infrastructure to Easily Test State-of-the-Art DRAM Chips

open access: yesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2023
arXiv
Ataberk Olgun   +2 more
exaly   +5 more sources

DLL Design with Wide Input Duty Cycle Range and Low Output Clock Duty Cycle Error [PDF]

open access: yesMicromachines
This paper presents the design of a Delay-Locked Loop (DLL) with a simple architecture and a wide input clock duty cycle range. The design is tailored to meet the increasing data rate and stringent clock requirements of modern semiconductor chips, with ...
Binyu Qin   +4 more
doaj   +2 more sources

RowPress Vulnerability in Modern DRAM Chips

open access: yesIEEE Micro
Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowHammer. RowPress induces bitflips by keeping a DRAM row open for a long period of time instead of repeatedly opening and closing the row.
Haocong Luo   +2 more
exaly   +3 more sources

Performance Analysis Of SRAM and Dram in Low Power Application [PDF]

open access: yesE3S Web of Conferences, 2023
All electronic systems must function quickly in the current environment, and 80 percent of electronic chips have memory components. SRAM (Static Random Access Memory) has thus become a major key component in many VLSI Chips in order to reduce the size of
Yuvaraj S.   +5 more
doaj   +1 more source

Addressing multiple bit/symbol errors in DRAM subsystem [PDF]

open access: yesPeerJ Computer Science, 2021
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults in DRAM subsystem are becoming more severe. Current servers mostly use CHIPKILL based schemes to tolerate up-to one/two symbol errors per DRAM beat. Such
Ravikiran Yeleswarapu, Arun K. Somani
doaj   +2 more sources

An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process

open access: yesIEEE Access, 2021
As the technology node of the dynamic random-access memory (DRAM) continues to decrease below the 10-nm-class, bit-cell failures due to the external environments have increased.
Jaewon Park   +5 more
doaj   +1 more source

Longevity of Commodity DRAMs in Harsh Environments Through Thermoelectric Cooling

open access: yesIEEE Access, 2021
Today, more and more commodity hardware devices are used in safety-critical applications, such as advanced driver assistance systems in automotive. These applications demand very high reliability of electronic components even in adverse environmental ...
Deepak M. Mathew   +5 more
doaj   +1 more source

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