Results 41 to 50 of about 604 (114)
Advanced Science, EarlyView.Electroforming‐free, self‐rectifying switching with polarity‐dependent threshold modulation is realized in selector‐only memory through Cu‐ion migration in a bilayer stacked dual functional materials. Ultrafast rupturing of Cu filament enables drift‐free operation with high stability.
Jae‐Kyeong Kim +7 more
wiley +1 more source
Physically unclonable functions in digital integrated circuits
Российский технологический журналObjectives. Modules that implement physically unclonable functions (PUFs) within a digital chip facilitate the direct use of challenge–response pairs by device applications that can query and read the PUF without external tools or exposing data outside ...
E. Ph. Pevtsov +3 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Suppression of Capacitor Leakage Through Thermal Budget Control in DRAM With ZrO2-Based Dielectrics
IEEE AccessAs the DRAM devices continue to scale down, the leakage current of the capacitors is having a significant impact on DRAM operation. We have analyzed the factors that significantly affect the leakage current of DRAM capacitors and improved the leakage ...
Dong-Sik Park +4 more
doaj +1 more source
A Survey of Hybrid Main Memory Architectures
Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2019 Rapidly evolving technology, increased internet speedand capacity, and the widespread use of mobile technologies have increased thedemands for faster applications and less power consumption of modern electronicsystems.
Ahmet Sertbaş +3 more
doaj +1 more source
SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range
Advanced Electronic Materials, EarlyView.A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel +6 more
wiley +1 more source
Research status and development direction of DRAM
Dianzi Jishu YingyongDynamic Random Access Memory (DRAM) is widely used in modern large-scale computers and ultra high speed communication systems due to its high storage density and cost-effectiveness. This article mainly introduces the development history, key technologies,
Niu Junyi, Sun Kai
doaj +1 more source
SwapX: An NVM-Based Hierarchical Swapping Framework
IEEE Access, 2017 Non-volatile memory (NVM) provides persistence with dynamic random access memory (DRAM)-like performance. This paper presents SwapX, an NVM-based hierarchical swapping framework for guest operating systems (OSs) in virtual machines (VMs).
Guoliang Zhu +5 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.Solvent‐processable polyoxovanadate–PMMA nanocomposites exhibit concentration‐dependent 2D and 3D organization on gold surfaces, while retaining multilevel redox switching at room temperature. These hybrids bridge nanoscale functionality and macroscopic measurement, establishing a versatile platform for hybrid molecular–polymer memory materials ...
Jonas Lorenz +11 more
wiley +1 more source
IEEE AccessModern Dynamic Random Access Memory (DRAM) banks are characterized by their ability to work in parallel, enabling concurrent servicing of multiple memory accesses through the interleaved DRAM banks.
Tareq A. Alawneh +6 more
doaj +1 more source