Results 21 to 30 of about 604 (114)

Translation, Cross-cultural Adaptation and Reliability of Brazilian portuguese version of the DRAM Questionnaire for Psychometric Evaluation in Low Back Pain [PDF]

Revista Brasileira de Ortopedia, 2020
Objective Based on studies regarding pain physiology and its relation to emotional distress conditions, psychological evaluation became essential to determine the most favorable patient profiles to distinct therapeutic approaches.
Carlos Tucci Neto, Alberto Jacob, Thiago Bonato de Amorim, Alex Oliveira de Araújo, Alexandre Fogaça Cristante   +4 more
doaj   +3 more sources

In-DRAM Cache Management for Low Latency and Low Power 3D-Stacked DRAMs

Micromachines, 2019
Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-high capacity and high-bandwidth memory implementations.
Ho Hyun Shin, Eui-Young Chung
doaj   +1 more source

Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM

IEEE Access
The challenges associated with semiconductor are increasing because of the rapid changes in the semiconductor market and the extreme scaling of semiconductors, with some processes reaching their technological limits.
Hyojin Park, Gyuhyun Kil, Wonju Sung, Junghoon Han, Jungwoo Song, Byoungdeog Choi   +5 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

HMB in DRAM-less NVMe SSDs: Their usage and effects on performance.

PLoS ONE, 2020
Solid-state drives (SSDs) that do not have internal dynamic random-access memory (DRAM) are being widely spread for client SSD and embedded SSD markets in recent years because they are cheap and consume less power.
Kyusik Kim, Taeseok Kim
doaj   +1 more source

Connections Between Perceived Social Support and the Body Image in the Group of Women With Diastasis Recti Abdominis

Frontiers in Psychology, 2021
Background: The psychological features of the body image and the role of perceived social support for women with diastasis recti abdominis (DRAM) is significant for the treatment of this group of patients, but it is difficult to identify research on this
Bernadetta Izydorczyk, Wiktoria Walenista, Agata Kamionka, Sebastian Lizińczyk, Magdalena Ptak   +4 more
doaj   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

In-Depth Review and Comparative Analysis of DRAM-Based PUFs

IEEE Access
Dynamic Random-Access Memory Physical Unclonable Functions (DRAM PUFs) are gaining interest in hardware security, particularly for resource-constrained IoT devices such as smart sensors in the era of rapid digitalization. Since DRAM is present in most of
Yuin Yee Chew, Wei Liang Lim, Jun Liang Tan, Chia Yee Ooi   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source