Results 201 to 210 of about 305,492 (342)

Advancements in Hypersaline Wastewater Treatment: The Promise of Quasi‐Liquid Surfaces to Reduce Salt Scaling

open access: yesAdvanced Functional Materials, EarlyView.
Durable quasi‐liquid polymer brush surfaces provide an anti‐scaling strategy for hypersaline brine evaporation and zero‐liquid‐discharge desalination. The smooth, liquid‐like QLS interface suppresses substrate‐side salt nucleation, promotes compact crystallization and dewetting, reduces crystal–surface contact area, and enables low‐adhesion salt ...
Mohammed Imran Khan, Bei Fan
wiley   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim   +9 more
wiley   +1 more source

Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry

open access: yesAdvanced Functional Materials, EarlyView.
A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming   +4 more
wiley   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

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