Results 221 to 230 of about 234,335 (333)
I-V Characteristics and Electrical Reliability of Metal-Si<sub>x</sub>N<sub>y</sub>-Metal Capacitors as a Function of Nitrogen Bonding Composition. [PDF]
Choi TM+5 more
europepmc +1 more source
Boundary value problems in plasma oscillations: the plasma capacitor
Fred Shure
openalex +1 more source
Switched-capacitor neural networks for linear programming [PDF]
Á. Rodríguez‐Vázquez+3 more
openalex +1 more source
Quantifying Electron and Ion Transfers in Contact Electrification with Ionomers
The concurrent existence of both electron and ion transfers in solid‐ionomer contact electrification is reported. The ion transfer contributes significantly to the process of contact electrification, especially at high humidity, although only less than 2% of ions participate in the ion transfer, suggesting that there is room for further performance ...
Xiaoting Ma+5 more
wiley +1 more source
Novel 3D Capacitors: Integrating Porous Nickel-Structured and Through-Glass-Via-Fabricated Capacitors. [PDF]
Zhang B, Gao L, Chen H, Zhang J.
europepmc +1 more source
The study presents biodegradable and recyclable mixed‐matrix membranes (MMMs), hydrogels, and cryogels using luminescent nanoscale metal‐organic frameworks (nMOFs) and biopolymers. These bio‐nMOF‐MMMs combine europium‐based nMOFs as probes for the status of the materials with the biopolymers agar and gelatine and present alternatives to conventional ...
Moritz Maxeiner+4 more
wiley +1 more source
Encoding of blink information via wireless contact lens for eye-machine interaction. [PDF]
Liu H+9 more
europepmc +1 more source
Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3
Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko+5 more
wiley +1 more source
Design of a High-Power, High-Efficiency GaN Power Amplifier for W-Band Applications. [PDF]
Liu S, Ma X, Zhang Y, Xu C.
europepmc +1 more source