Results 161 to 170 of about 6,570 (187)

Characterization of CdZnTe detectors

2021
Cadmium-Zink-Tellurid (CdZnTe) Detektoren bestehen aus Halbleitermaterialien und sind über einen breiten Energiebereich sensitiv auf Röntgen- und Gammastrahlung. Sie kommen in der Hadronen- und Astrophysik zum Einsatz, finden jedoch auch Anwendungsbereiche in der Medizin.
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?????????????????????????? ?????????????? CdZnTe ?? ???????????????????? ???????????????????? ??-?????????????????? ???? ?????? ????????????

2014
???????????????? ???????????????????????????? ?????????? ???????????????????????? ?????????????? CdZnTe ?????? ?????????????????? ???????????????????????? ?????????????????????????? ?????????? ?????????????? ?? ???????????????????? ??-??????????????????.
  +6 more sources

Pulse height linearity of CdZnTe

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC), 2009
CdZnTe crystals equipped with Frisch collars are studied at the Semiconductor Materials and Radiological Technologies Laboratory (S.M.A.R.T. Lab) at Kansas State University for use as room-temperature, high-resolution, semiconductor gamma-ray detectors. Obtaining plots of Relative Pulse Height vs.
P.B. Ugorowski, A. Kargar, D.S. McGregor
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Surface passivation of CdZnTe wafers

Materials Science in Semiconductor Processing, 2005
Abstract The chemical polishing process and the subsequent passivation process of CdZnTe wafers were studied. The treatment effects were tested through XPS analysis and I–V measurement. The chemical etching in 2%Br–MeOH solution may effectively remove the damaged layer and improve the ohmic contact between CdZnTe wafer and Au electrodes.
Wang Xiaoqin, Jie Wanqi, Li Qiang, Gu Zhi   +3 more
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Surface processing of CdZnTe crystals

SPIE Proceedings, 2012
The Cd 1-x Zn x Te ( x = 0.1) crystals from two different manufacturers were studied by photoconductivity (PC) measurements. The samples 1 and 2 were subjected to chemical etching and irradiation with nanosecond laser pulses. The IR transmittance spectra of the crystals before and after laser irradiation were also monitored.
V. A. Gnatyuk, O. I. Vlasenko, S. N. Levytskyi, E. Dieguez, J. Crocco, H. Bensalah, M. Fiederle, A. Fauler, T. Aoki   +8 more
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Vapour pressure investigation of CdZnTe

Journal of Alloys and Compounds, 2004
Abstract Vapour pressure measurement in the Cd–Zn–Te system is reported for T=700–1300 K and P≤760 mm Hg. From the experimental data for x=0.05, 0.10, 0.15, 0.25, 0.5, 0.75, 0.80, 0.90 and 1.0, complete P–T projection of the phase diagram for the quasi-binary Cd1−xZnxTe system has been constructed.
Guskov, V. N., Greenberg, Jacob H., Fiederle, Michael, Benz, Klaus-Werner   +3 more
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???????????????????????? ???????????????????????? ?????????????????? ???????????????????? ???????????????????????? ?????????????????? ???? ???????????? CdTe ?? CdZnTe

2015
?? ?????????????????????????????????? ???????????????????? ???????????????????????? ?????????????????? ?? ???????????????? ???? ???????????????????????? ?????????????????? ???????????????????????? ??????????????????????, ?????????????? ???????????????? ???????????????? ???????????????? ?? ?????????? ?????????????? ???? ???? ??????????. ?? ??????????????
  +6 more sources

As-Received CdZnTe Substrate Contamination

Journal of Electronic Materials, 2015
State-of-the-art as-received (112)B CdZnTe substrates were examined for surface impurity contamination, polishing damage, and tellurium precipitates/inclusions. A maximum surface impurity concentration of Al = 7.5 × 1014, Si = 3.7 × 1013, Cl = 3.12 × 1015, S = 1.7 × 1014, P = 7.1 × 1013, Fe = 1.0 ×  1013, Br = 1.9 × 1012, and Cu = 4 × 1012 atoms cm−2 ...
J. D. Benson, L. O. Bubulac, M. Jaime-Vasquez, C. M. Lennon, P. J. Smith, R. N. Jacobs, J. K. Markunas, L. A. Almeida, A. Stoltz, J. M. Arias, P. S. Wijewarnasuriya, J. Peterson, M. Reddy, M. F. Vilela, S. M. Johnson, D. D. Lofgreen, A. Yulius, M. Carmody, R. Hirsch, J. Fiala, S. Motakef   +20 more
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?????????????????????????????? ???????????????????????????? ???????????????????? ???????????????????????????? ?? ??????????-?????????????????? ???? ???????????? (CdZnTe)

2015
?????????????????????? ?????????????? ???????????????????????????? ?? ??????????-?????????????????? ???? ?????????????? ???????????????????????????? ???????????????????? ???? CdTe ?? CdZnTe. ?????????????????? CdTe ???????? ???????????????? ???????????????????????? ?????????????? ??????????????????, ?? CdZnTe ??? ?????????????? ?????????????????? ??????
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Collection efficiency of CdZnTe detectors

IEEE Instrumentation and Measurement Technology Conference Sensing, Processing, Networking. IMTC Proceedings, 2002
In this work, the detection of signal charge produced by X-rays incident on resistive CdZnTe semiconductor substrates, at different detector geometries, within the X-ray diagnostic energy range, is investigated. The experimental results suggest that the observed signal-to-noise ratio is dependent upon the choice of the polarizing electrode that is ...
G.C. Giakos, S. Vedantham, J. Odogba
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