Results 41 to 50 of about 3,741 (207)
SabiadObjective: In recent years, gamma cameras with semiconductor detectors (CdZnTe) have entered routine practise diagnostic scintigraphic imaging in nuclear medicine.
Armağan Aydın +2 more
doaj +1 more source
Long‐Wavelength Infrared InAs/GaSb T2SLs on Silicon: A Review
Advanced Photonics Research, Volume 7, Issue 8, August 2026.This review summarises growth techniques for GaSb/GaAs/Si wafers, compares different growth techniques for GaSb buffer on GaAs wafers, LWIR InAs/GaSb T2SLs on InAs, GaSb, and GaAs wafers and proposes the buffer design for the growth of LWIR InAs/GaSb T2SLs on Si wafers, shown in the schematic.
Chen Liu +3 more
wiley +1 more source
Scientific Reports, 2021 Both material quality and detector performance have been steadily improving over the past few years for the leading room temperature radiation detector material cadmium-zinc-telluride (CdZnTe).
Utpal N. Roy +4 more
doaj +1 more source
Advanced Materials Interfaces, Volume 13, Issue 14, 21 July 2026.A triple‐cation perovskite detector with a quasi‐interdigitated back‐contact architecture enables highly sensitive and linear EUV/soft x‐ray detection by minimizing electrode shadowing and enhancing charge extraction. Efficient interfacial carrier collection and rapid temporal response highlight the potential of back‐contact‐engineered perovskites for ...
Jingying Liu +5 more
wiley +1 more source
Morphology, structure and electronic properties of CdTe surfaces studied by scanning tunneling microscopy [PDF]
, 2011 A scanning tunneling microscope has been used to study the surface properties of CdTe crystals. Coupled with scanning tunneling spectroscopy (STS) and atomic force microscopy, the surface morphology, structure and electronic properties of CdTe and CdZnTe
EGAN, CHRISTOPHER,KIERAN
core
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2001 Abstract (Cd,Zn)Te single crystals fabricated in our laboratory by Vertical Gradient Freeze Method were subjected to two types of experiments. In the first experiment, samples were annealed at temperatures 600–900°C under different Cd overpressures. They were quenched after annealing to room temperature and Hall effect and conductivity measurements ...
Lyudmila Turyanska +5 more
openaire +2 more sources
Point defect characterization in CdZnTe [PDF]
2008 IEEE Nuclear Science Symposium Conference Record, 2008 Measurements of the defect levels and performance testing of CdZnTe detectors were performed by means of Current Deep Level Transient Spectroscopy (I-DLTS), Transient Charge Technique (TCT), Current versus Voltage measurements (I–V), and gamma-ray spectroscopy.
Gul, R. +5 more
openaire +1 more source
Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins +8 more
wiley +1 more source
Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays
Sensors, 2021 Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV.
Stergios Tsigaridas +6 more
doaj +1 more source
2000 IEEE Nuclear Science Symposium. Conference Record (Cat. No.00CH37149), 2001 Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current ...
Luke, P.N. +3 more
openaire +2 more sources