Results 21 to 30 of about 3,090 (211)
Electrical properties of heterostructures MnS/n-CdZnTe obtained by spray pyrolysis
Materials Research Express, 2021 The conditions for obtaining diode heterostructures of MnS/ n -CdZnTe by the method of spray pyrolysis of MnS alabandite thin films on n -CdZnTe crystalline substrates were investigated.
Ivan G Orletsky +6 more
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Purification of CdZnTe by electromigration [PDF]
Journal of Applied Physics, 2015 Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm.
K. Kim +7 more
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Effect of Deep-Level Defects on the Performance of CdZnTe Photon Counting Detectors
Sensors, 2020 The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device’s performance are not yet ...
Yingrui Li +7 more
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Improvement of charge collection efficiency of the CdZnTe detectors by decreasing the Te inclusions
Materials Research Express, 2022 CdZnTe is a promising material for room-temperature radiation semiconductor detectors. However, their radiation response performance might be deteriorated owing to defects within the material such as Te inclusions.
Hyojeong Choi +2 more
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Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays
Sensors, 2016 This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes.
Jakub Pekárek +7 more
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East European Journal of Physics, 2020 This work is devoted to the study by computer simulation of the mechanisms of the influence of radiation defects, arising under the influence of neutron irradiation, on the changes in electrical properties: resistivity ρ, electron mobility μn, lifetime ...
Alexandr I. Kondrik, Gennadij P. Kovtun
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Influence of impurities and structural defects on the properties of CdTe- and CdZnTe-based detectors
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2022 The most researched materials for uncooled semiconductor detectors of ionizing radiation are CdTe:Cl and Cd0.9Zn0.1Te, which allow to obtain detectors with high values of resistivity ρ and electron mobility. In the process of producing detector materials,
Alexandr Kondrik, Gennadiy Kovtun
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Detector properties of Cd0,9Zn0,1Te:Al under the influence of low doze gamma irradiation
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2016 Clarification of the influence of defects on detecting properties of CdZnTe detectors and understanding of the behavior of defects under the influence of aggressive radiation environment are very important to improve detector performance.
А. И. Кондрик
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East European Journal of Physics, 2021 This work is devoted to the study of the mechanisms of the influence of radiation defects, arising under the influence of gamma irradiation, on the change in resistivity ρ, lifetime of nonequilibrium electrons τn and holes τp, in CdTe:Cl and Cd0.9Zn0.1Te
Alexandr I. Kondrik
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Nukleonika, 2018 The aim of this study was to investigate the thermal neutron measurement capability of a CdZnTe detector irradiated in a mixed gamma-neutron radiation field.
Yücel Haluk +4 more
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