Results 11 to 20 of about 691 (175)
Application of CdZnTe Quasi-Hemispherical Detectors in Strong Gamma-Radiation Fields [PDF]
EPJ Web of Conferences, 2020 The results of a study of some ways to improve spectroscopy characteristics of the CdZnTe quasi-hemispherical detectors when working in high gamma radiation fluxes are presented.
Loutchanski Anatoli +3 more
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Nuclear Engineering and Technology, 2019 In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (μe) and electron mobility-lifetime product (μτ)e in a CdZnTe detector.In the ...
H. Yücel +3 more
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Illumination response of CdZnTe [PDF]
SPIE Proceedings, 2011 CdZnTe (CZT) semiconducting crystals are of interest for use as room temperature X- and γ-ray spectrometers. Several studies have focused on understanding the various electronic properties of these materials, such as the surface and bulk resistivities and the distribution of the electric field within the crystal. Specifically of interest is how these
Teague, Lucile C. +5 more
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Sensors, 2013 CdZnTe detectors have been under development for the past two decades, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution.
Qiushi Ren +4 more
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Influence of impurities and structural defects on the properties of CdTe- and CdZnTe-based detectors
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2022 The most researched materials for uncooled semiconductor detectors of ionizing radiation are CdTe:Cl and Cd0.9Zn0.1Te, which allow to obtain detectors with high values of resistivity ρ and electron mobility. In the process of producing detector materials,
Alexandr Kondrik, Gennadiy Kovtun
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Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2019 Solid-state ionizing radiation detectors based on high-resistance semiconductors can be used to monitor the safety of nuclear reactors. High-resistance CdTe and CdZnTe have very good electrophysical and detector properties.
Alexander Kondrik, Gennadiy Kovtun
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Effect of Deep-Level Defects on the Performance of CdZnTe Photon Counting Detectors
Sensors, 2020 The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device’s performance are not yet ...
Yingrui Li +7 more
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Denoising data acquisition algorithm for array pixelated CdZnTe nuclear detector
Open Physics, 2019 Traditionally, the binary search method is used to collect the denoising data in the array pixilated CdZnTe nuclear detector. Due to the high dispersion of the data itself, the acquisition efficiency is low and the acquisition result has a large error. A
Luo Xiangxiang +2 more
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Electrical properties of heterostructures MnS/n-CdZnTe obtained by spray pyrolysis
Materials Research Express, 2021 The conditions for obtaining diode heterostructures of MnS/ n -CdZnTe by the method of spray pyrolysis of MnS alabandite thin films on n -CdZnTe crystalline substrates were investigated.
Ivan G Orletsky +6 more
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Purification of CdZnTe by electromigration [PDF]
Journal of Applied Physics, 2015 Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm.
K. Kim +7 more
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