Results 131 to 140 of about 15,895 (291)
Advanced Science, EarlyView.The GeTe acting as “molecule scissors” can tailor chemical bond, the breaking of Ag‐Se bonds and the formation of Ge‐Se bonds occur in the A‐SnSe matrix, along with the formation of Ag2Se precipitates. This process helps to optimize the thermoelectric properties, and also improves its mechanical properties to a certain extent.
Xing Yang +8 more
wiley +1 more source
Structural phase transition and elastic properties of cerium chalcogenides at high pressure
, 2011 The structural and elastic properties of cerium chalcogenides (CeZ, Z = S, Se, Te) under high pressure have been investigated by using the potential model considered up to third nearest neighbor interaction.
S. Verma, K. Kholiya
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Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Recent Advances in Programmable Metasurfaces and Meta‐Devices
Advanced Electronic Materials, EarlyView.Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao +4 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen +9 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A one‐pot solvothermal reaction yields Bi2Te3 nanoplate/Te nanorod composites, in which the antimony precursor regulates crystallite size without lattice incorporation. Drop‐cast flexible films reach Seebeck coefficients of −127 and 323 µV K−1 at 393 K, and a flexible thermoelectric generator produces 6.2 mV at a temperature difference of 5.6 K ...
Keisuke Kaneko +6 more
wiley +1 more source
Porous Amorphous Chalcogenides as Selective Adsorbents for Heavy Metals
, 2015 Porous Amorphous Chalcogenides as Selective Adsorbents for Heavy ...
Mercouri G. Kanatzidis (1350288) +2 more
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Advanced Electronic Materials, EarlyView.A GeTe‐Sb2Te3 composition spread is fabricated using RF magnetron co‐sputtering. Increasing Sb content stabilized the high‐performance cubic GeTe phase. The composition 5Sb3₇Te5₈ exhibited the highest thermoelectric performance, achieving a power factor of ∼1 mW m−1 K−2 and a maximum zT of 0.81 at 300°C.
Nur Qalishah Adanan +9 more
wiley +1 more source
Incorporation of Ni in Cu2SnSe3: An insight into the reduction in electrical resistivity
Materials Research ExpressIn the present study, Cu _2 SnSe _3 / x % Ni ( x = 0, 1, 2 and 3 wt%) composite thermoelectric were synthesized using solid-state reaction followed by sintering in the mid-temperature range 300–570 K.
Rohith Jagan +5 more
doaj +1 more source
Proton and ammonia intercalation into layered iron chalcogenides
, 2018 Hydrothermal synthesis of ammonia-intercalated iron chalcogenides using an alkali-free route.
Craig M. Brown +11 more
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