Results 261 to 270 of about 54,855 (336)

Maximizing the second-harmonic generation response <i>via</i> coordination-induced localization of nonbonding electrons. [PDF]

Chem Sci
Zhang JX, Xu AL, Chi Y, Wu XT, Lin H, Zhu QL.   +5 more
europepmc   +1 more source

In Situ Amidation‐Derived Interfacial Modulation for Homogeneous Ultra‐High Nanoparticle Loading Toward Robust and Flexible Piezoelectric Composites

Advanced Functional Materials, Volume 36, Issue 36, 4 May 2026.
Synergistic interfacial strategy between inorganic ceramic fillers and polymer chains effectively inhibit particle aggregation and interfacial incompatibility. complex covalent and non‐covalent interfacial interactions promote superior uniformity, ultra‐high ceramic filler loading, and strong grain‐to‐grain connectivity, thereby enabling the ...
HakSu Jang, In Beom Heo, Changyeon Baek, Dong Won Jeon, Donghun Lee, Nagamalleswara Rao Alluri, Hyejeong Choi, HyoMin Jeon, SungHoon Kim, Hyunseung Kim, Jihun Choi, Hyun‐Soo Chang, Chang Kyu Jeong, Min‐Ku Lee, Jun Mo Koo, Tiandong Zhang, Geon‐Tae Hwang, Sung Beom Cho, Gyoung‐Ja Lee, Hyeong Min Jin, Kwi‐Il Park   +20 more
wiley   +1 more source

A comparative study of the hot electron energy loss rate in zinc- and cadmium compound quasi-two-dimensional materials. [PDF]

Nanoscale Adv
Phuong Thuy HT, Hien ND.
europepmc   +1 more source

Spray Pyrolysed Tin Chalcogenide Thin Films: Optimization of optoelectronic properties of SnS for possible photovoltaic application as an absorber layer

, 2012
T. H. Sajeesh
openalex   +1 more source

Introducing the Groundbreaking Design of the First n‐Input AND Gate Using an Optical‐MOSFET With a Revolutionary Structure of Pulse‐Shaped Gates

Advanced Photonics Research, Volume 7, Issue 5, May 2026.
The paper introduces the first logic gate implementation using optical metal–oxide‐semiconductor field‐effect transistor architecture, specifically designing two‐input and three‐input AND gates based on a silicene waveguide with pulse‐shaped gates. The key innovations include: (1) pulse‐shaped gate design.
Hamed Emami‐Nejad, Ali Mir
wiley   +1 more source

Synthesis, Isolation, and Reactivity of a Phosphinidene Telluride. [PDF]

Angew Chem Int Ed Engl
Hu C, García-Romero Á, Ray D, Pink M, Goicoechea JM.   +4 more
europepmc   +1 more source

Ripples in Two‐Dimensional Transition Metal Sulfides: Formation Mechanism, Optoelectronic Regulation, and Application Prospects

Battery Energy, Volume 5, Issue 3, May 2026.
Ripples transform 2D materials by creating tunable strain fields. This enables precise manipulation of electronic and optical properties, driving innovations in next‐generation optoelectronics and quantum devices. ABSTRACT As integrated circuit technology approaches its physical limits in the post‐Moore era, transition metal sulfides, with atomic‐scale
Haitao Yu, Xiao Wu
wiley   +1 more source

Manganese (Mn) doping effects on the structure and surface characteristics of copper zinc tin sulphide (CZTS) transition metal sulphides synthesised <i>via</i> a sol-gel method. [PDF]

RSC Adv
Najitha AR, Che Balian SR, Ahmoum H, Omar FS, Chelvanathan P, Su'ait MS.   +5 more
europepmc   +1 more source

Discovery of a New Cu-Based Chalcogenide with High zT Near Room Temperature: Low-Cost Alternative for the Bi₂Te₃-Based Thermoelectrics. [PDF]

Adv Mater
Cherniushok O, Parashchuk T, Snyder GJ, Wojciechowski KT.   +3 more
europepmc   +1 more source