Results 41 to 50 of about 54,855 (336)

Electronic correlations in vanadium chalcogenides: BaVSe3 versus BaVS3

open access: yes, 2010
Albeit structurally and electronically very similar, at low temperature the quasi-one-dimensional vanadium sulfide BaVS3 shows a metal-to-insulator transition via the appearance of a charge-density-wave state, while BaVSe3 apparently remains metallic ...
Anisimov V I   +7 more
core   +1 more source

Lanthanum Telluride: Mechanochemical Synthesis of a Refractory Thermoelectric Material [PDF]

open access: yes, 2008
Recent experimental work on lanthanum telluride has confirmed its significant potential as an n-type material for high temperature thermoelectric (TE) power generation application.
Fleurial, Jean-Pierre   +2 more
core   +1 more source

First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides

open access: yes, 2016
Cu-based chalcogenides are promising materials for thin-film solar cells with more than 20% measured cell efficiency. Using first-principles calculations based on density functional theory, the optoelectronic properties of a group of Cu-based ...
B. Partoens   +10 more
core   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

open access: yesAdvanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu   +8 more
wiley   +1 more source

High-pressure study of superconducting and non-superconducting single crystals of the same nominal composition Rb0.8Fe2Se2

open access: yes, 2011
Two single crystalline samples with the same nominal composition of Rb0.8Fe2Se2 prepared via slightly different precursor routes under the same thermal processing conditions were investigated at ambient and high pressures.
Chu, C. W.   +7 more
core   +1 more source

Simple mechanisms that impede the Berry phase identification from magneto-oscillations [PDF]

open access: yes, 2018
The phase of quantum magneto-oscillations is often associated with the Berry phase and is widely used to argue in favor of topological nontriviality of the system (Berry phase $2\pi n+\pi$).
Kuntsevich, A. Yu.   +2 more
core   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

Band Alignments of GeS and GeSe Materials

open access: yesCrystals, 2022
Here we present new findings of a comprehensive study of the fundamental physicochemical properties for GeS and GeSe in bulk form. UV and X-ray photoelectron spectroscopies (UPS/XPS) were employed for the experiments, which were carried out on in situ ...
Miłosz Grodzicki   +4 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect

open access: yesFrontiers in Neuroscience, 2021
Ovonic threshold switch (OTS) has received great attention in neuromorphic computing due to its support for high-density synapse array as a selector and leaky-integration-firing functions Hodgkin-Huxley neurons.
Shiqing Zhang   +5 more
doaj   +1 more source

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