Results 21 to 30 of about 6,632 (142)
Particle Technology in Chemical Mechanical Planarization
KONA Powder and Particle Journal, 2014 In order to keep pace with Moore’s law, multilevel metallization has become the process of choice. Having a planar wafer surface before every successive step in multilevel metallization is important. The Chemical
Kalyan S. Gokhale, Brij M. Moudgil
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Low temperature sacrificial wafer bonding for planarization after very deep etching [PDF]
, 1994 A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes ...
Berenschot, J.W. +3 more
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Surface micromachined mechanisms and micromotors [PDF]
, 1991 Electric micromotors are sub-millimeter sized actuators capable of unrestrained motion in at least one degree of freedom. Polysilicon surface micromachining using heavily phosphorus-doped LPCVD polysilicon for the structural material, LPCVD silicon ...
Mehregany, Mehran, Tai, Yu-Chong
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Lubricants, 2017 This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer.
Filip Ilie, George Ipate
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Microstructural Effects During Chemical Mechanical Planarization of Copper [PDF]
, 2010 Novel die-stacking schema using through-wafer interconnects require vias to be filled with electroplated Cu, resulting in thick copper films, and requiring an aggressive first-step CMP.
Andersen, Patrick J. +3 more
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Review on modeling and application of chemical mechanical polishing
Nanotechnology Reviews, 2020 With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming
Zhao Gaoyang +6 more
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High-Q-factor Al [subscript 2]O[subscript 3] micro-trench cavities integrated with silicon nitride waveguides on silicon [PDF]
, 2020 We report on the design and performance of high-Q integrated optical micro-trench cavities on silicon. The microcavities are co-integrated with silicon nitride bus waveguides and fabricated using wafer-scale silicon-photonics-compatible processing steps.
Adam, Thomas N. +8 more
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Urea as a complexing agent for selective removal of Ta and Cu in sodium carbonate based alumina chemical–mechanical planarization slurry [PDF]
Journal of the Serbian Chemical Society, 2022 This work reports urea as a promising complexing agent in sodium carbonate-based alumina slurry for chemical–mechanical planarization (CMP) of tantalum and copper. Ta and Cu were polished using Na2CO3 (1 wt. %) with alumina (2 wt.
Shukla Arpita +2 more
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Mechanical Engineering Journal, 2016 A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond.
Yasuhisa SANO +6 more
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International Journal of Prognostics and Health Management, 2017 As an essential process in semiconductor manufacturing, Chemical Mechanical Planarization has been studied in recent decades and the material removal rate has been proved to be a critical performance indicator.
Yuan Di, Xiaodong Jia, Jay Lee
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