Results 51 to 60 of about 6,632 (142)

Colloid Aspects of Chemical-Mechanical Planarization

open access: yesKemija u Industriji, 2010
The essential parts of interconnects for silicon based logic and memory devices consist of metal wiring (e.g. copper), a barrier metal (Ta, TaN), and of insulation (SiO2 , low-k polymer).
Matijević, E., Babu, S. E.
doaj  

Synthesis and Characterization of SiO2 Nanoparticles and Their Efficacy in Chemical Mechanical Polishing Steel Substrate

open access: yesAdvances in Materials Science and Engineering, 2014
Chemical mechanical polishing (CMP) technology is extensively used in the global planarization of highly value-added and large components in the aerospace industry. A nanopowder of SiO2 was prepared by the sol-gel method and was compounded into polishing
M. J. Kao, F. C. Hsu, D. X. Peng
doaj   +1 more source

Scalable methods for ultra-smooth platinum in nanoscale devices

open access: yesMicro and Nano Engineering, 2019
Ultra-smooth metal structures are increasingly important in nanoscale device applications, from photonics to molecular electronics and 2D material growth.
Charmaine Chia   +2 more
doaj   +1 more source

Study on the Preparation and Performance of Self-Regressive Fixed Abrasive Chemical Mechanical Polishing Pad

open access: yesMachines, 2022
Chemical mechanical polishing (CMP) technology is one of the key technologies to realize the global planarization of semiconductor wafer surfaces. With the increasing popularity and universality of its application, more and higher requirements are put ...
Jianguo Yao   +4 more
doaj   +1 more source

Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate

open access: yesNanomaterials, 2022
Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched ...
Jae-Young Bae   +7 more
doaj   +1 more source

Role of the Oxidation State in Cobalt Chemical Mechanical Planarization

open access: yesMetalMat
Cobalt (Co) is a promising next‐generation contact metal to replace tungsten for the system‐large‐scale integration devices beyond the 5 nm technology node due to its low resistivity and high gap‐filling capability at high aspect ratios.
Ganggyu Lee   +7 more
doaj   +1 more source

Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate

open access: yesNanomaterials, 2022
To scale down semiconductor devices to a size less than the design rule of 10 nm, lithography using a carbon polymer hard-mask was applied, e.g., spin-on-carbon (SOC) film.
Jun-Myeong Lee   +6 more
doaj   +1 more source

Process development of silicon-silicon carbide hybrid structures for micro-engines (January 2002) [PDF]

open access: yes, 2002
MEMS-based gas turbine engines are currently under development at MIT for use as a button-sized portable power generator or micro-aircraft propulsion sources. Power densities expected for the micro-engines require very high rotor peripheral speeds of 300-
Choi, D.   +2 more
core  

Ultrathin TaN Damascene Nanowire Structures on 300-mm Si Wafers for Quantum Applications

open access: yesIEEE Transactions on Quantum Engineering, 2023
We report on the development and characterization of superconducting damascene tantalum nitride (TaN) nanowires, 100 nm–3 μm wide, with TaN thicknesses varying from 5 to 35 nm, using 193-nm optical lithography and chemical mechanical ...
Ekta Bhatia   +19 more
doaj   +1 more source

Characterization and Modeling of Chemical-Mechanical Polishing for Polysilicon Microstructures [PDF]

open access: yes, 2004
Long the dominant method of wafer planarization in the integrated circuit (IC) industry, chemical-mechanical polishing is starting to play an important role in microelectromechnical systems (MEMS).
Boning, Duane S., Tang, Brian D.
core  

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