Friction, 2017 The chemical mechanical polishing (CMP) process has become a widely accepted global planarization technology. The abrasive material is one of the key elements in CMP.
Baichun Zhang, Hong Lei, Yi Chen
doaj +1 more source
Load Assisted Dissolution AND Damage of Copper Surface under Single Asperity Contact: Influence of Contact Loads and Surface Environment [PDF]
, 2012 Copper has become a widely used material in advanced submicron multilevel technologies due to its low resistivity and high electromigration resistance.
Chandra, Abhijit +3 more
core +2 more sources
Atomic-scale chemical mechanical polishing: advances and challenges for the post-Moore’s law era
Materials FuturesChemical mechanical polishing (CMP) has emerged as a critical technology for local and global surface planarization in integrated circuit manufacturing for decades.
Lifei Zhang, Xinchun Lu
doaj +1 more source
Gongneng cailiao yu qijian xuebaoIn very large-scale integrated (VLSI) circuit manufacturing, chemical mechanical planarization (CMP) is essential for achieving global surface flatness across multilayer metal interconnects, significantly influencing lithographic precision and electrical
Yu ZHANG, Jianzhong LIU, Biqiu LIU
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Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements
Micromachines, 2018 We investigated the possibility of employing refractive index (RI) measurements for inline incoming slurry control at the point of use (POU), as an alternative to the widespread densitometry method.
Leticia Vazquez Bengochea +4 more
doaj +1 more source
The Effects of Friction and Temperature in the Chemical-Mechanical Planarization Process. [PDF]
Materials (Basel), 2023 Ilie F +3 more
europepmc +1 more source
Modeling Dielectric Erosion in Multi-Step Copper Chemical-Mechanical Polishing [PDF]
, 2004 A formidable challenge in the present multi-step Cu CMP process, employed in the ultra-large-scale integration (ULSI) technology, is the control of wafer surface non-uniformity, which primarily is due to dielectric erosion and Cu dishing.
Chun, Jung-Hoon +2 more
core
Method for one-to-one polishing of silicon nitride and silicon oxide [PDF]
, 2009 The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that ...
Babu, Suryadevara V., Natarajan, Anita
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Intramolecular (Electron) Delocalization Between Aromatic Donors and their Tethered Cation–Radicals. Application of Electrochemical and Structural Probes [PDF]
, 2001 To study the mechanism of electronic transduction along (poly)phenylene chains, a series of aromatic donors with general formula D–B–D has been synthesized [where D = 2,5-dimethoxy-4-methylphenyl donor and B = (poly)phenylene bridge]; and the ...
Kochi, Jay K. +3 more
core +1 more source
Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers
, 2011 We have demonstrated a technique capable of in-line measurement of dielectric constant of low-k interconnect films on patterned wafers utilizing a test key of ~50x50 \mu m in size. The test key consists of a low-k film backed by a Cu grid with >50% metal
Andrew R. Schwartz +5 more
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