Results 91 to 100 of about 1,071 (155)

Colloid aspects of chemical–mechanical planarization

Journal of Colloid and Interface Science, 2008
The essential parts of interconnects for silicon based logic and memory devices consist of metal wiring (e.g. copper), a barrier metal (Ta, TaN), and of insulation (SiO2, low-k polymer). The deposition of the conducting metal cannot be confined to trenches, resulting in additional coverage of Cu and Ta/TaN on the surface of the dielectrics, yielding an
E, Matijević, S V, Babu
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Chemical mechanical planarization of gold

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2014
In this article, the authors investigate chemical mechanical planarization (CMP) of gold. Our experiments show that the oxidizer concentration, hardness of the adhesion layer, and surfactants added to stabilize the slurry are the main factors determining the outcome of the process.
Golnaz Karbasian, Patrick J. Fay, Huili Grace Xing, Alexei O. Orlov, Gregory L. Snider   +4 more
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Advances in Chemical-Mechanical Planarization

MRS Bulletin, 2002
AbstractThe primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip.
Rajiv K. Singh, Rajeev Bajaj
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Chemical Mechanical Planarization of Ruthenium

ECS Meeting Abstracts, 2008
Abstract not Available.
Shyam S Venkataraman, Yuzhuo Li
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CHAMPS (chemical-mechanical planarization simulator)

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502), 2002
Simulation of chemical-mechanical polishing is important because the chip-level planarity and wafer-level uniformity dependent on many dynamic factors are difficult to control. CHAMPS (chemical mechanical planarization simulator) has been developed for predicting and optimizing the thickness distribution after the CMP process using the chip level ...
null Yoo-Hyon Kim, null Kwang-Jae Yoo, null Kyung-Hyun Kim, null Bo-Yeon Yoon, null Young-Kwan Park, null Sang-Rok Ha, null Jeong-Taek Kong   +6 more
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Planarization Ability of Chemical Mechanical Planarization (Cmp) Processes

MRS Proceedings, 1994
ABSTRACTMethods for determining planarization ability of CMP were explored. Options included film thickness measurements of the dielectric over metal and field, TIR measurements using profilometry, and a combination of the two. The attempt to observe the in situ change in the topography was addressed in two distinct experimental approaches.
Matt Stell, Rahul Jairath, Mukesh Desai, Robert Tolles   +3 more
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CeO2 Particles for Chemical Mechanical Planarization

MRS Proceedings, 2003
AbstractNano-sized cerium oxide particles in the size range of 5 to 500nm have been synthesized for use in chemical mechanical planarization (CMP) applications. The CeO2 particles were prepared using cerium nitrate salts with bases such as ammonium water, ethylamine, or other alkylamine /polyalkylamine compounds.
Xiandong Feng, Yie-Shein. Her, W. Linda., Jackie Davis, Eric Oswald, Jin Lu, Vicky Bryg, Sara Freeman, Dave Gnizak   +8 more
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Chemical-mechanical planarization

IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - ASMC '92 Proceedings, 2003
The chemical-mechanical planarization (CMP) techniques applied to insulating layers in multilayered integrated circuits are discussed. Advantages and concerns of CMP are considered. Process developments are described. >
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Chemical-Mechanical Planarization (CMP)

2002
Chemical-mechanical planarization (CMP) has found application in semiconductor processing as a method of controlling the planarity of the multiple metal and dielectric layers that form the IC interconnect structure [3.1, 3.2]. Nonplanarity is introduced to the wafer surface at the transistor isolation level and increases as the number of metal layers ...
Christopher L. Borst, William N. Gill, Ronald J. Gutmann   +2 more
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