Results 101 to 110 of about 1,071 (155)
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Lubrication behavior in chemical-mechanical planarization
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004., 2004Chemical-mechanical planarization (CMP) is a synergistic tribological process. It occurs between a polymeric polishing pad, a wafer, and between which is a chemical slurry containing nanoabrasive particles. CMP functions similar to chemical boundary lubrication of mechanical systems, except that the objective of the CMP is to remove materials in a ...
H. Liang, G. Xu
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Organic Oxidants for Chemical Mechanical Planarization
Electrochemical and Solid-State Letters, 2009Reaction of iodine with carbon acids with a pK a below 13 leads to iodine-containing molecules that are effective oxidants for copper while being stable and having a high solubility. The identities of these compounds and other reaction products is elucidated by the use of liquid chromatography-mass spectrometry and UV/visible analysis.
Francis de Rege +5 more
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Review—Post-Chemical Mechanical Planarization Cleaning Technology
ECS Journal of Solid State Science and Technology, 2023Chemical mechanical planarization (CMP), a commonly employed process for attaining local and global planarization in integrated circuits fabrication, leaves contaminants and defects on the surface polished. Due to the miniaturization of devices, new materials/ processes for the fabrication of IC circuits are considered, introducing new post-CMP issues.
Jenasree Hazarika +2 more
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Flow Simulation for Chemical Mechanical Planarization
Japanese Journal of Applied Physics, 1999In this paper we present a three-dimensional fluid dynamics simulation for chemical mechanical planarization (CMP) processes. The slurry shearing stress on the wafer surface is usually considered to be closely related to the polishing rate. To our knowledge, this is the first work that addresses the wafer-scale removal rate and nonuniformity based ...
Ming-Nan Fu, Fu-Chu Chou
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Characterization of chemical-mechanical planarization processes
International Electron Devices and Materials Symposium, 2005Chemical mechanical polishing of blanket and patterned oxide films has been studied. Fundamental parameter's governing the planarization technique were examined for the development of the process window as well as for the understanding of the process characteristics.
S.M. Jang +5 more
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Chemical mechanical planarization for microelectronics applications
Materials Science and Engineering: R: Reports, 2004Abstract The progressively decreasing feature size of the circuit components has tremendously increased the need for the global surface planarization of the various thin film layers that constitute the integrated circuit (IC). Global planarization, being one of the major solutions to meet the demands of the industry, needs to be achieved following ...
Parshuram B. Zantye +2 more
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Development of Aluminum Chemical Mechanical Planarization
Journal of The Electrochemical Society, 2001The paper describes the development of an aluminum chemical mechanical planarization process that was successfully integrated into the dual damascene technology producing I Gb dynamic random access memory chips meeting all yield and sheet resistance requirements.
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Chemical-mechanical planarization advances with the times
IEEE Potentials, 2008CMP has come a long way from its beginnings as just a simple method for polishing oxide materials to a smooth, finished surface. Today, chemical-mechanical planarization plays a critical role in contemporary integrated circuit processing, and it will still be needed for at least the next ten years as the scale of IC geometries continues to shrink.
Vijayakumar, Arun +2 more
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Optical endpoint detection for chemical mechanical planarization
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1999We present product wafer and laboratory test results of a production worthy, in situ, broadband optical endpoint system in the context of a simple model that describes the reflectance of semiconductor wafers during chemical mechanical planarization. Broadband and single wavelength approaches are presented.
Thomas Bibby +2 more
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Physics and tribology of chemical mechanical planarization
Journal of Physics: Condensed Matter, 2008The physical and tribological attributes of the chemical mechanical planarization (CMP) process are reviewed. Kinematic analysis of a CMP polisher is described, which can be applied in establishing tribological models. These models elucidate the lubrication regimes at the workpiece/polishing pad interface at the macroscale in order to examine the ...
Toshi Kasai, Bharat Bhushan
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