Results 111 to 120 of about 1,071 (155)

Pattern Planarization Model of Chemical Mechanical Polishing

Journal of The Electrochemical Society, 1999
A polishing model of chemical mechanical polishing (CMP) is established with consideration of the effects of pattern density. This paper focuses on mechanical polishing behaviors and isolates the roles of chemical effects when patterns exist. A three-link manipulator, which is in equilibrium with the polishing motion of CMP, is adopted to study the ...
Dar‐Zen Chen, Bor‐Shin Lee
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SiLK dielectric planarization by chemical mechanical polishing

Microelectronic Engineering, 2000
Abstract As the feature size of integrated circuits is driven to smaller dimensions the importance of the inter- and intralayer isolator capacitance in future metallization schemes becomes more pronounced. Organic polymers with low dielectric constants are one class of material choice for the replacement of SiO2. However, their successful integration
F Küchenmeister, U Schubert, C Wenzel
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Fluctuation Model of Chemical Mechanical Planarization

Journal of The Electrochemical Society, 2001
A novel physically based model of material polishing is developed on the basis of an etch pit nucleation-annihilation approach in dissolution kinetics. A sublinear Preston's equation as well as a pattern-dependent rate of material removal are derived from this model. The calculation results fit well with the available experimental data.
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Controlling Scratching in Cu Chemical Mechanical Planarization

Journal of The Electrochemical Society, 2009
In the manufacture of advanced semiconductor devices, undesirable scratches are produced during such fine-scale material removal processes as chemical mechanical planarization (CMP). In this paper, the upper bound loads for scratching in CMP at single-particle contacts are estimated and validated by atomic force microscope experiments on thin ...
T. Eusner, N. Saka, J.-H. Chun, S. Armini, M. Moinpour, P. Fischer   +5 more
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Chemical Mechanical Planarization of Copper Damascene Structures

Journal of The Electrochemical Society, 2000
We describe the chemical mechanical planarization (CMP) of copper damascene structures using an IC1400 pad and four different types of slurries. Two alumina-based slurries and two silica-based slurries were evaluated. After successful removal of the excess Cu, we examined the topography of the planarized structures using scanning electron microscopy ...
P. Wrschka, J. Hernandez, G. S. Oehrlein, J. King   +3 more
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Chemical mechanical planarization of copper: pH effect

Journal of Materials Science Letters, 2003
The effect of pH and H2O2 on the etching and polishing behavior of copper was studied. The copper surface morphology formed in pH 4 and 6 solution was observed. It was concluded that the chemical mechanical polishing removal rates and etch rates of copper in slurries with 5% H2O2 were found to vary with pH.
Du, T., Desai, V.
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Stick-Slip Transitions in Chemical Mechanical Planarization

Electrochemical and Solid-State Letters, 2010
On closer analysis, the apparently simple act of sliding two contacting substrates relative to one another reveals a myriad of fundamental physical questions that have a broad technical application. Present semiconductor manufacturing imperatives require that planarization uniformity be maintained over length scales spanning 8 orders of magnitude, 1 ...
J. Vlahakis, V. P. Manno, C. B. Rogers, R. White   +3 more
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Effective filtration of chemical mechanical planarization slurries

2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530), 2004
Low abrasive content and much smaller mean particles of silica, alumina and ceria abrasives in new generation chemical mechanical planarization (CMP) slurries demand much tighter retention of /spl ges/0.5 /spl mu/m and even smaller particles with least effect on the mean working particles.
R.K. Singh, C. Patel, G. Conner, T. Towle, R. Viscomi, M. Federau   +5 more
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Chemical-mechanical planarization of Cu and Ta

JOM, 2001
As device dimensions continue to shrink, multilevel (>8) interconnects are required to efficiently implement complex logic device designs in a single silicon chip. When the number of metal interconnect levels increases, the available depth-of-focus budget of lithographic tools imposes stringent planarity requirements that can only be met currently by ...
S. V. Babu, A. Jindal, Y. Li
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Friction modeling in linear chemical-mechanical planarization

IEEE Control Systems, 2008
In this article, we develop an analytical model of the relationship between the wafer/pad friction and process configuration. We also provide experimental validation of this model for in situ process monitoring. CMP thus demonstrates that the knowledge and methodologies developed for friction modeling and control can be used to advance the ...
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