Semi-Supervised Deep Kernel Active Learning for Material Removal Rate Prediction in Chemical Mechanical Planarization [PDF]
Sensors, 2023 The material removal rate (MRR) is an important variable but difficult to measure in the chemical–mechanical planarization (CMP) process. Most data-based virtual metrology (VM) methods ignore the large number of unlabeled samples, resulting in a waste of
Chunpu Lv +4 more
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Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning [PDF]
Microsystems & Nanoengineering, 2023 The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) and annealing severely affect the ...
Qimeng Sun +7 more
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Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free [PDF]
Scientific Reports, 2021 Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at ...
Young-Hye Son +8 more
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Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical–mechanical-planarization polishing-rate [PDF]
Scientific Reports, 2022 In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4′-oxydianiline (ODA) was successfully performed.
Gi-Ppeum Jeong +10 more
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Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization [PDF]
Nanomaterials, 2021 For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive
Seong-In Kim +7 more
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Motor Power Signal Analysis for End-Point Detection of Chemical Mechanical Planarization [PDF]
Micromachines, 2017 In the integrated circuit (IC) manufacturing, in-situ end-point detection (EPD) is an important issue in the chemical mechanical planarization (CMP) process.
Hongkai Li, Xinchun Lu, Jianbin Luo
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Effect of Conditioner Type and Downforce, and Pad Surface Micro-Texture on SiO2 Chemical Mechanical Planarization Performance [PDF]
Micromachines, 2019 Based on a previous work where we investigated the effect of conditioner type and downforce on the evolution of pad surface micro-texture during break-in, we have chosen certain break-in conditions to carry out subsequent blanket SiO2 wafer polishing ...
Jeffrey McAllister +6 more
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Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers [PDF]
MicromachinesThe integration of thick homoepitaxial layers on silicon carbide (SiC) substrates is critical for enabling high-voltage power devices, yet it remains challenged by substrate surface quality and wafer geometry evolution.
Chi-Hsiang Hsieh +7 more
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Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization [PDF]
Micromachines, 2017 In this study, slurry availability and the extent of the slurry mixing (i.e., among fresh slurry, spent slurry, and residual rinse-water) were varied via three different injection schemes.
Matthew Bahr +3 more
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Monodisperse SiO2 Spheres: Efficient Synthesis and Applications in Chemical Mechanical Polishing [PDF]
NanomaterialsThe atomic level polishing of a material surface affects the accuracy of devices and the application of materials. Silica slurries play an important role in chemical mechanical polishing (CMP) by polishing the material surface.
Jinlong Ge +7 more
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