Results 21 to 30 of about 1,071 (155)

Chemical Mechanical Polishing of Plasma‐Modified Cu/Polymer Interfaces for Advanced Hybrid Bonding [PDF]

Advanced Science
Hybrid bonding, referring to direct bonding between metal and insulator layers, has become a key technology for next‐generation semiconductor packaging, enabling high‐density interconnects, fast signal transmission, and a compact form factor.
Sukkyung Kang, Chansu Jeon, Juseong Park, Seulah Park, Kyung Min Kim, Sanha Kim   +5 more
doaj   +2 more sources

Review on modeling and application of chemical mechanical polishing

Nanotechnology Reviews, 2020
With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming
Zhao Gaoyang, Wei Zhen, Wang Weilei, Feng Daohuan, Xu Aoxue, Liu Weili, Song Zhitang   +6 more
doaj   +1 more source

High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

Mechanical Engineering Journal, 2016
A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond.
Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI   +6 more
doaj   +1 more source

Enhanced Virtual Metrology on Chemical Mechanical Planarization Process using an Integrated Model and Data-Driven Approach

International Journal of Prognostics and Health Management, 2017
As an essential process in semiconductor manufacturing, Chemical Mechanical Planarization has been studied in recent decades and the material removal rate has been proved to be a critical performance indicator.
Yuan Di, Xiaodong Jia, Jay Lee
doaj   +1 more source

Dynamic Pad Surface Metrology Monitoring by Swing-Arm Chromatic Confocal System

Applied Sciences, 2020
This study aims to develop a dynamic pad monitoring system (DPMS) for measuring the surface topography of polishing pad. Chemical mechanical planarization/polishing (CMP) is a vital process in semiconductor manufacturing. The process is applied to assure
Chao-Chang A. Chen, Jen-Chieh Li, Wei-Cheng Liao, Yong-Jie Ciou, Chun-Chen Chen   +4 more
doaj   +1 more source

Engineering SiO2 Nanoparticles: A Perspective on Chemical Mechanical Planarization Slurry for Advanced Semiconductor Processing

KONA Powder and Particle Journal, 2023
Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles and chemical interaction in slurry to remove materials from the surface of films. With advancements in semiconductor device technology applying various materials and
Ganggyu Lee, Kangchun Lee, Seho Sun, Taeseup Song, Ungyu Paik   +4 more
doaj   +1 more source

Urea as a complexing agent for selective removal of Ta and Cu in sodium carbonate based alumina chemical–mechanical planarization slurry [PDF]

Journal of the Serbian Chemical Society, 2022
This work reports urea as a promising complexing agent in sodium carbonate-based alumina slurry for chemical–mechanical planarization (CMP) of tantalum and copper. Ta and Cu were polished using Na2CO3 (1 wt. %) with alumina (2 wt.
Shukla Arpita, Selvam Victoria Noyel, Ramachandran Manivannan   +2 more
doaj   +1 more source

Slurry Design for Chemical Mechanical Polishing

KONA Powder and Particle Journal, 2014
Chemical Mechanical Polishing (CMP) process is widely used in the microelectronics industry for planarization of metal and dielectric layers to achieve multi-layer metallization.
G. Bahar Basim, Brij M. Moudgil
doaj   +1 more source

Hybrid CMP Slurry Supply System Using Ionization and Atomization

Applied Sciences, 2021
Chemical mechanical planarization (CMP) is frequently used in semiconductor manufacturing to polish the surfaces of multiple layers in a wafer. The CMP uses a slurry that aids in fabricating a smooth surface by removing the excess materials.
Hoseong Jo, Da Sol Lee, Seon Ho Jeong, Hyun Seop Lee, Hae Do Jeong   +4 more
doaj   +1 more source

Copper removal from semiconductor CMP wastewater in the presence of nano-SiO2 through biosorption

Water Reuse, 2021
Copper-bearing wastewater from chemical mechanical planarization (CMP) is a typical semiconductor development byproduct. How to effectively treat Cu2+ in the CMP wastewater is a great concern in the microchip manufacturing industry.
Xiaoyu Wang, Gude Buer, Wei Fan, Lei Gao, Mingxin Huo   +4 more
doaj   +1 more source