Results 31 to 40 of about 1,071 (155)

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Scientific Reports, 2023
Silicon carbide (SiC) wafers have attracted attention as a material for advanced power semiconductor device applications due to their high bandgap and stability at high temperatures and voltages. However, the inherent chemical and mechanical stability of
Ganggyu Lee, Yeram Lee, Sungmin Kim, Donghwan Kim, Hongjun Park, Myungju Woo, Taeseup Song, Ungyu Paik   +7 more
doaj   +1 more source

Particulate Science and Technology in the Engineering of Slurries for Chemical Mechanical Planarization

KONA Powder and Particle Journal, 2014
Chemical Mechanical Planarization (CMP) is a process that is now routinely used to planarize metal as well dielectric films during the fabrication of integrated circuits.
Srini Raghavan, Manish Keswani, Renhe Jia   +2 more
doaj   +1 more source

Review on atomistic and quantum mechanical simulation approaches in chemical mechanical planarization

Applied Surface Science Advances
Chemical mechanical planarization (CMP) faces critical challenges including non-uniform material removal, surface defect generation, and complex tribochemical interactions that limit process control at advanced semiconductor nodes.
Seokgyu Ryu, Murali Ramu, Patrick Joohyun Kim, Junghyun Choi, Kangchun Lee, Jihoon Seo   +5 more
doaj   +1 more source

Investigation of slurry composition and triboelectrochemical effects on copper electrochemical–mechanical polishing

International Journal of Electrochemical Science
Copper electrochemical mechanical polishing (ECMP) is a critical planarization technique for advanced integrated circuit manufacturing, particularly as feature sizes shrink below 65 nm and low‑k dielectrics—vulnerable to mechanical damage—are ...
Yan-Fei Bian, Peng-Fei Fan, Yuan-Yuan Cheng, Jing-Zhong Chang   +3 more
doaj   +1 more source

Experimental Strategies for Studying Tribo-Electrochemical Aspects of Chemical–Mechanical Planarization

Lubricants
Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough surface by combining several functions of tribology (friction, lubrication), chemistry, and electrochemistry (corrosion, wear, tribo-corrosion).
Kassapa Gamagedara, Dipankar Roy
doaj   +1 more source

Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge₁Sb₄Te₅ Film Surface Chemical-Mechanical-Planarization

Applied Sciences, 2021
A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change ...
Gi-Ppeum Jeong, Young-Hye Son, Jun-Seong Park, Pil-Su Kim, Man-Hyup Han, Seong-Wan Hong, Jin-Hyung Park, Hao Cui, Bo-Un Yoon, Jea-Gun Park   +9 more
doaj   +1 more source

Synthesis and Characterization of SiO2 Nanoparticles and Their Efficacy in Chemical Mechanical Polishing Steel Substrate

Advances in Materials Science and Engineering, 2014
Chemical mechanical polishing (CMP) technology is extensively used in the global planarization of highly value-added and large components in the aerospace industry. A nanopowder of SiO2 was prepared by the sol-gel method and was compounded into polishing
M. J. Kao, F. C. Hsu, D. X. Peng
doaj   +1 more source

Scalable methods for ultra-smooth platinum in nanoscale devices

Micro and Nano Engineering, 2019
Ultra-smooth metal structures are increasingly important in nanoscale device applications, from photonics to molecular electronics and 2D material growth.
Charmaine Chia, Stefanie S. Jeffrey, Roger T. Howe   +2 more
doaj   +1 more source

Design and optimization of ferric chloride and oxalic acid based slurry to chemically mechanically polish stainless steel

Jin'gangshi yu moliao moju gongcheng, 2023
To enhance the chemical mechanical polishing (CMP) efficiency of flexible display substrates, a polishing slurry based on ferric chloride and oxalic acid was proposed for polishing 304 stainless steel substrates.
Zeyu WANG, Yanan PENG, Jianxiu SU, Jiapeng CHEN   +3 more
doaj   +1 more source

Nanoparticle Engineering for Chemical-Mechanical Planarization [PDF]

, 2009
Increasing reliance on electronic devices demands products with high performance and efficiency. Such devices can be realized through the advent of nanoparticle technology. This book explains the physicochemical properties of nanoparticles according to each step in the chemical mechanical planarization (CMP) process, including dielectric CMP, shallow ...
Paik, Ungyu, Park, Jea-Gun
openaire   +3 more sources