Results 41 to 50 of about 1,071 (155)

Study on the Preparation and Performance of Self-Regressive Fixed Abrasive Chemical Mechanical Polishing Pad

Machines, 2022
Chemical mechanical polishing (CMP) technology is one of the key technologies to realize the global planarization of semiconductor wafer surfaces. With the increasing popularity and universality of its application, more and higher requirements are put ...
Jianguo Yao, Haixu Liu, Zhankui Wang, Yongwei Zhu, Jianxiu Su   +4 more
doaj   +1 more source

Role of the Oxidation State in Cobalt Chemical Mechanical Planarization

MetalMat
Cobalt (Co) is a promising next‐generation contact metal to replace tungsten for the system‐large‐scale integration devices beyond the 5 nm technology node due to its low resistivity and high gap‐filling capability at high aspect ratios.
Ganggyu Lee, Yehwan Kim, Myungju Woo, Sumin Hong, Hongjun Park, Giha Lee, Taeseup Song, Ungyu Paik   +7 more
doaj   +1 more source

Ultrathin TaN Damascene Nanowire Structures on 300-mm Si Wafers for Quantum Applications

IEEE Transactions on Quantum Engineering, 2023
We report on the development and characterization of superconducting damascene tantalum nitride (TaN) nanowires, 100 nm–3 μm wide, with TaN thicknesses varying from 5 to 35 nm, using 193-nm optical lithography and chemical mechanical ...
Ekta Bhatia, Jack Lombardi, Soumen Kar, Michael Senatore, Stephen Olson, Tuan Vo, Sandra Schujman, Jakub Nalaskowski, Hunter Frost, John Mucci, Brian Martinick, Pui Yee Hung, Ilyssa Wells, Thomas Murray, Corbet S. Johnson, Aleksandra Biedron, Vidya Kaushik, Dan Campbell, Matthew D. Lahaye, Satyavolu S. Papa Rao   +19 more
doaj   +1 more source

Tribo-Electrochemical Considerations for Assessing Galvanic Corrosion Characteristics of Metals in Chemical Mechanical Planarization

Electrochem
The manufacturing of integrated circuits involves multiple steps of chemical mechanical planarization (CMP) involving different materials. Mitigating CMP-induced defects is a main requirement of all CMP schemes.
Kassapa U. Gamagedara, Dipankar Roy
doaj   +1 more source

Predicting the Material Removal Rate in Chemical Mechanical Planarization Based on Improved Neural Network

IEEE Access
Chemical Mechanical Planarization (CMP) technology in integrated circuit manufacturing plays a critical role in realizing local and global flatness of silicon wafer surface.
Jianchao Wang, Zhaoyang Shi, Pingping Yu, Zhenzhou Wang   +3 more
doaj   +1 more source

Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire

Friction, 2017
The chemical mechanical polishing (CMP) process has become a widely accepted global planarization technology. The abrasive material is one of the key elements in CMP.
Baichun Zhang, Hong Lei, Yi Chen
doaj   +1 more source

Surface interaction forces in chemical-mechanical planarization

Thin Solid Films, 1997
Abstract Understanding the role of surface intra-molecular forces is critical in a variety of aspects of chemical-mechanical polishing technology. In this paper we explore some of the critical areas where this is an important parameter, such as material removal mechanisms in oxide polishing. Particular attention is given to the use of coupling single
Rensselaer Polytechnic Institute, Materials Science and Engineering Department, Troy, NY 12180-3590, USA ( host institution ), Rajan, Krishna ( author ), Singh, Rajiv ( author ), Adler, J ( author ), Mahajan, U ( author ), Rabinovich, Y ( author ), Moudgil, B.M ( author )   +6 more
openaire   +2 more sources

Atomic-scale chemical mechanical polishing: advances and challenges for the post-Moore’s law era

Materials Futures
Chemical mechanical polishing (CMP) has emerged as a critical technology for local and global surface planarization in integrated circuit manufacturing for decades.
Lifei Zhang, Xinchun Lu
doaj   +1 more source

Studies on optimization method of chemical mechanical planarization models using grid window refinement strategies

Gongneng cailiao yu qijian xuebao
In very large-scale integrated (VLSI) circuit manufacturing, chemical mechanical planarization (CMP) is essential for achieving global surface flatness across multilayer metal interconnects, significantly influencing lithographic precision and electrical
Yu ZHANG, Jianzhong LIU, Biqiu LIU
doaj   +1 more source

Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements

Micromachines, 2018
We investigated the possibility of employing refractive index (RI) measurements for inline incoming slurry control at the point of use (POU), as an alternative to the widespread densitometry method.
Leticia Vazquez Bengochea, Yasa Sampurno, Marcus Kavaljer, Rob Johnston, Ara Philipossian   +4 more
doaj   +1 more source