Results 141 to 150 of about 190,952 (277)

Surface Modification of Additively Manufactured Nitinol by Wet Chemical Etching. [PDF]

open access: yesMaterials (Basel), 2021
Nazarov D   +4 more
europepmc   +1 more source

Ultrastable Photoactive Halide Perovskite Nanocrystal‐Sensitized SnO2 Nanorods for Room‐Temperature NO2 Detection

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Metal oxide (MOx)‐based NO2 gas sensors typically require high temperatures or ultraviolet light, limiting their practical use. To enable visible‐light activation at room temperature, efficient and stable photosensitizers should be integrated with nanostructured MOx hosts.
Yeonji Yuk   +10 more
wiley   +1 more source

Lift-off free catalyst for metal assisted chemical etching of nanostructured silicon zone plates in vapour phase

open access: yesNano Express
Metal-assisted chemical etching of silicon, especially in the vapour phase, is a highly promising technique for fabricating nanostructures with high aspect ratios.
Hanna Ohlin   +3 more
doaj   +1 more source

Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites

open access: yesAdvanced Functional Materials, EarlyView.
Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles   +16 more
wiley   +1 more source

Enhanced Photoluminescence of R6G Dyes from Metal Decorated Silicon Nanowires Fabricated through Metal Assisted Chemical Etching. [PDF]

open access: yesMaterials (Basel), 2023
Kochylas I   +6 more
europepmc   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

open access: yesAdvanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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