Chemical Mechanical Planarization and Old Italian Violins [PDF]
Micromachines, 2018 Previous studies have shown that spectral analysis based on force data can elucidate fundamental physical phenomena during chemical mechanical planarization (CMP). While it has not been literally described elsewhere, such analysis was partly motivated by
Ara Philipossian +2 more
doaj +5 more sources
Semi-Supervised Deep Kernel Active Learning for Material Removal Rate Prediction in Chemical Mechanical Planarization [PDF]
Sensors, 2023 The material removal rate (MRR) is an important variable but difficult to measure in the chemical–mechanical planarization (CMP) process. Most data-based virtual metrology (VM) methods ignore the large number of unlabeled samples, resulting in a waste of
Chunpu Lv +4 more
doaj +2 more sources
Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning [PDF]
Microsystems & Nanoengineering, 2023 The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) and annealing severely affect the ...
Qimeng Sun +7 more
doaj +2 more sources
Particle Technology in Chemical Mechanical Planarization
KONA Powder and Particle Journal, 2014 In order to keep pace with Moore’s law, multilevel metallization has become the process of choice. Having a planar wafer surface before every successive step in multilevel metallization is important. The Chemical
Kalyan S. Gokhale, Brij M. Moudgil
doaj +3 more sources
Super fine cerium hydroxide abrasives for SiO2 film chemical mechanical planarization performing scratch free [PDF]
Scientific Reports, 2021 Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at ...
Young-Hye Son +8 more
doaj +2 more sources
Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical–mechanical-planarization polishing-rate [PDF]
Scientific Reports, 2022 In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4′-oxydianiline (ODA) was successfully performed.
Gi-Ppeum Jeong +10 more
doaj +2 more sources
Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization [PDF]
Nanomaterials, 2021 For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive
Seong-In Kim +7 more
doaj +2 more sources
Motor Power Signal Analysis for End-Point Detection of Chemical Mechanical Planarization [PDF]
Micromachines, 2017 In the integrated circuit (IC) manufacturing, in-situ end-point detection (EPD) is an important issue in the chemical mechanical planarization (CMP) process.
Hongkai Li, Xinchun Lu, Jianbin Luo
doaj +2 more sources
Effect of Conditioner Type and Downforce, and Pad Surface Micro-Texture on SiO2 Chemical Mechanical Planarization Performance [PDF]
Micromachines, 2019 Based on a previous work where we investigated the effect of conditioner type and downforce on the evolution of pad surface micro-texture during break-in, we have chosen certain break-in conditions to carry out subsequent blanket SiO2 wafer polishing ...
Jeffrey McAllister +6 more
doaj +2 more sources
Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers [PDF]
MicromachinesThe integration of thick homoepitaxial layers on silicon carbide (SiC) substrates is critical for enabling high-voltage power devices, yet it remains challenged by substrate surface quality and wafer geometry evolution.
Chi-Hsiang Hsieh +7 more
doaj +2 more sources