Results 131 to 140 of about 6,682 (189)

Chemical Mechanical Planarization of Ruthenium

ECS Meeting Abstracts, 2008
Abstract not Available.
Shyam S Venkataraman, Yuzhuo Li
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CHAMPS (chemical-mechanical planarization simulator)

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502), 2002
Simulation of chemical-mechanical polishing is important because the chip-level planarity and wafer-level uniformity dependent on many dynamic factors are difficult to control. CHAMPS (chemical mechanical planarization simulator) has been developed for predicting and optimizing the thickness distribution after the CMP process using the chip level ...
null Yoo-Hyon Kim, null Kwang-Jae Yoo, null Kyung-Hyun Kim, null Bo-Yeon Yoon, null Young-Kwan Park, null Sang-Rok Ha, null Jeong-Taek Kong   +6 more
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Chemical-mechanical planarization

IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - ASMC '92 Proceedings, 2003
The chemical-mechanical planarization (CMP) techniques applied to insulating layers in multilayered integrated circuits are discussed. Advantages and concerns of CMP are considered. Process developments are described. >
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Planarization Ability of Chemical Mechanical Planarization (Cmp) Processes

MRS Proceedings, 1994
ABSTRACTMethods for determining planarization ability of CMP were explored. Options included film thickness measurements of the dielectric over metal and field, TIR measurements using profilometry, and a combination of the two. The attempt to observe the in situ change in the topography was addressed in two distinct experimental approaches.
Matt Stell, Rahul Jairath, Mukesh Desai, Robert Tolles   +3 more
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Chemical-Mechanical Planarization (CMP)

2002
Chemical-mechanical planarization (CMP) has found application in semiconductor processing as a method of controlling the planarity of the multiple metal and dielectric layers that form the IC interconnect structure [3.1, 3.2]. Nonplanarity is introduced to the wafer surface at the transistor isolation level and increases as the number of metal layers ...
Christopher L. Borst, William N. Gill, Ronald J. Gutmann   +2 more
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CeO2 Particles for Chemical Mechanical Planarization

MRS Proceedings, 2003
AbstractNano-sized cerium oxide particles in the size range of 5 to 500nm have been synthesized for use in chemical mechanical planarization (CMP) applications. The CeO2 particles were prepared using cerium nitrate salts with bases such as ammonium water, ethylamine, or other alkylamine /polyalkylamine compounds.
Xiandong Feng, Yie-Shein. Her, W. Linda., Jackie Davis, Eric Oswald, Jin Lu, Vicky Bryg, Sara Freeman, Dave Gnizak   +8 more
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Lubrication behavior in chemical-mechanical planarization

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004., 2004
Chemical-mechanical planarization (CMP) is a synergistic tribological process. It occurs between a polymeric polishing pad, a wafer, and between which is a chemical slurry containing nanoabrasive particles. CMP functions similar to chemical boundary lubrication of mechanical systems, except that the objective of the CMP is to remove materials in a ...
H. Liang, G. Xu
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Organic Oxidants for Chemical Mechanical Planarization

Electrochemical and Solid-State Letters, 2009
Reaction of iodine with carbon acids with a pK a below 13 leads to iodine-containing molecules that are effective oxidants for copper while being stable and having a high solubility. The identities of these compounds and other reaction products is elucidated by the use of liquid chromatography-mass spectrometry and UV/visible analysis.
Francis de Rege, Pengxiang Yang, Steven Grumbine, Jason Aggio, Roger Martin, Vlasta Brusic   +5 more
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Flow Simulation for Chemical Mechanical Planarization

Japanese Journal of Applied Physics, 1999
In this paper we present a three-dimensional fluid dynamics simulation for chemical mechanical planarization (CMP) processes. The slurry shearing stress on the wafer surface is usually considered to be closely related to the polishing rate. To our knowledge, this is the first work that addresses the wafer-scale removal rate and nonuniformity based ...
Ming-Nan Fu, Fu-Chu Chou
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Characterization of chemical-mechanical planarization processes

International Electron Devices and Materials Symposium, 2005
Chemical mechanical polishing of blanket and patterned oxide films has been studied. Fundamental parameter's governing the planarization technique were examined for the development of the process window as well as for the understanding of the process characteristics.
S.M. Jang, S.L. Hsu, L.M. Liu, M.S. Lin, F.Y. Tsai, B.T. Dai   +5 more
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