Results 141 to 150 of about 6,682 (189)

Chemical boundary lubrication in chemical–mechanical planarization

Tribology International, 2005
Abstract Chemical–mechanical planarization (CMP) is a synergistic tribological process. It occurs between a polymeric polishing pad, a solid body to be made smooth, between which is a chemical slurry containing nanoparticles of abrasive materials. CMP functions similar to chemical boundary lubrication of mechanical systems, except that the objective ...
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Chemical mechanical planarization for microelectronics applications

Materials Science and Engineering: R: Reports, 2004
Abstract The progressively decreasing feature size of the circuit components has tremendously increased the need for the global surface planarization of the various thin film layers that constitute the integrated circuit (IC). Global planarization, being one of the major solutions to meet the demands of the industry, needs to be achieved following ...
Parshuram B. Zantye, Ashok Kumar, A.K. Sikder   +2 more
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Oxidation and removal mechanisms during chemical–mechanical planarization

Wear, 2007
Abstract This paper studies surface properties of metals during chemical–mechanical polishing (CMP). In order to pinpoint the effects of chemistry and mechanical impacts separately, during CMP, we polished Cu and Al surfaces using two distinct slurries of hydrogen peroxide (H2O2) and alumina nanoparticles.
D. Ng, M. Kulkarni, J. Johnson, A. Zinovev, D. Yang, H. Liang   +5 more
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Development of Aluminum Chemical Mechanical Planarization

Journal of The Electrochemical Society, 2001
The paper describes the development of an aluminum chemical mechanical planarization process that was successfully integrated into the dual damascene technology producing I Gb dynamic random access memory chips meeting all yield and sheet resistance requirements.
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Atomistic Mechanisms Underlying Chemical Mechanical Planarization of Copper

MRS Proceedings, 2003
AbstractWith an aim to understanding the fundamental mechanisms underlying chemical mechanical planarization (CMP) of copper, we simulate the nanoscale polishing of a copper surface with molecular dynamics utilizing the embedded atom method. Mechanical abrasion produces rough planarized surfaces with a large chip in front of the abrasive particle, and ...
Y.Y. Ye, R. Biswas, A. Bastawros, A. Chandra   +3 more
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Investigation of chemical tooth mechanism in chemical mechanical planarization of germanium

Tribology International, 2017
Abstract The effect of pH on germanium (Ge) chemical mechanical planarization (CMP) removal rate (RR) using polymorphs of titania was investigated. Rutile and anatase polymorphs of titania were used to study the removal rate of germanium in absence of oxidizer.
Apeksha Gupta, S. Noyel Victoria, R. Manivannan   +2 more
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Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Tribology Letters, 2013
Chemical mechanical planarization/polishing (CMP) of copper has emerged as an important component in semiconductor processing. It involves both chemical and mechanical effects, consisting of several steps such as passivation, film dissolution, chemical corrosion, and abrasive abrasion.
Jing Li, Zhimin Chai, Yuhong Liu, Xinchun Lu   +3 more
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Effect on Two-Step Polishing Process of Electrochemical Mechanical Planarization and Chemical–Mechanical Planarization on Planarization

Japanese Journal of Applied Physics, 2009
Chemical–mechanical planarization (CMP) is a technique used for planarizing an overburden film in the fabrication of semiconductor devices by chemical treatment and mechanical abrasion. However, a variety of defects such as dishing of metal interconnects, erosion, delamination, and metal layer peeling are generated by a high down force in CMP.
Sukhoon Jeong, Sukbae Joo, Hyoungjae Kim, Sungryul Kim, Haedo Jeong   +4 more
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Inhibition Mechanism of Benzotriazole in Copper Chemical Mechanical Planarization

Applied Mechanics and Materials, 2014
During the process of chemical mechanical planarization (CMP) of copper, benzotriazole (BTA) is the most commonly used inhibitor in the slurry. Though the corrosion inhibition mechanism has been studied widely, the mechanism of BTA layer on copper surface in CMP slurries should be further investigated.
Jing Li, Xin Chun Lu, Zong Bo Zhang
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Fluctuation Model of Chemical Mechanical Planarization

Journal of The Electrochemical Society, 2001
A novel physically based model of material polishing is developed on the basis of an etch pit nucleation-annihilation approach in dissolution kinetics. A sublinear Preston's equation as well as a pattern-dependent rate of material removal are derived from this model. The calculation results fit well with the available experimental data.
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