Results 11 to 20 of about 6,682 (189)

Slurry Injection Schemes on the Extent of Slurry Mixing and Availability during Chemical Mechanical Planarization [PDF]

open access: yesMicromachines, 2017
In this study, slurry availability and the extent of the slurry mixing (i.e., among fresh slurry, spent slurry, and residual rinse-water) were varied via three different injection schemes.
Matthew Bahr   +3 more
doaj   +2 more sources

Monodisperse SiO2 Spheres: Efficient Synthesis and Applications in Chemical Mechanical Polishing [PDF]

open access: yesNanomaterials
The atomic level polishing of a material surface affects the accuracy of devices and the application of materials. Silica slurries play an important role in chemical mechanical polishing (CMP) by polishing the material surface.
Jinlong Ge   +7 more
doaj   +2 more sources

Colloid Aspects of Chemical-Mechanical Planarization

open access: yesKemija u Industriji, 2010
The essential parts of interconnects for silicon based logic and memory devices consist of metal wiring (e.g. copper), a barrier metal (Ta, TaN), and of insulation (SiO2 , low-k polymer).
Matijević, E., Babu, S. E.
doaj   +1 more source

Chemical Mechanical Polishing of Plasma‐Modified Cu/Polymer Interfaces for Advanced Hybrid Bonding [PDF]

open access: yesAdvanced Science
Hybrid bonding, referring to direct bonding between metal and insulator layers, has become a key technology for next‐generation semiconductor packaging, enabling high‐density interconnects, fast signal transmission, and a compact form factor.
Sukkyung Kang   +5 more
doaj   +2 more sources

Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper

open access: yesApplied Sciences, 2021
Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles.
Seonghyun Park, Hyunseop Lee
doaj   +1 more source

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

open access: yesAdvanced Materials Interfaces, 2023
4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang   +6 more
doaj   +1 more source

Correlation between pattern density and linewidth variation in silicon photonics waveguides [PDF]

open access: yes, 2020
We describe the correlation between the measured width of silicon waveguides fabricated with 193 nm lithography and the local pattern density of the mask layout.
Bogaerts, Wim   +3 more
core   +1 more source

In Situ Metrology for Pad Surface Monitoring in CMP Using a Common-Path Phase-Shifting Interferometry: A Feasibility Study

open access: yesApplied Sciences, 2021
In the fabrication of semiconductors, chemical mechanical polishing (CMP) is an essential wafer-planarization process. For optimal CMP, it is crucial to monitor the texture of the polishing pad; this leads to homogenous planarization of wafers. Hence, we
Eun-Soo Kim, Woo-June Choi
doaj   +1 more source

Investigation of the Two-Way Injection Slurry-Supply Method for the Cu CMP Process

open access: yesApplied Sciences, 2023
The effect of the two-way injection method during a copper chemical mechanical planarization (CMP) process was investigated. The two-way slurry-injection method has the advantage of not only preventing the degradation of the slurry, but also shortening ...
Chulwoo Bae   +4 more
doaj   +1 more source

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm [PDF]

open access: yes, 2013
The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line.
Chen, Xia   +8 more
core   +4 more sources

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