Results 21 to 30 of about 6,682 (189)
Applied Sciences, 2022 Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP) in the metal gate structures (e.g., buried gates, replacement metal gates) and via contact in the middle of line (MOL) process for sub−7 nm ...
Kangchun Lee, Jihoon Seo
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Applied Sciences, 2021 Chemical mechanical planarization (CMP) is a technology widely employed in device integration and planarization processes used in semiconductor fabrication. In CMP, the polishing pad plays a key role both mechanically and chemically.
Seonho Jeong +3 more
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Low temperature sacrificial wafer bonding for planarization after very deep etching [PDF]
, 1994 A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes ...
Berenschot, J.W. +3 more
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Surface micromachined mechanisms and micromotors [PDF]
, 1991 Electric micromotors are sub-millimeter sized actuators capable of unrestrained motion in at least one degree of freedom. Polysilicon surface micromachining using heavily phosphorus-doped LPCVD polysilicon for the structural material, LPCVD silicon ...
Mehregany, Mehran, Tai, Yu-Chong
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Lubricants, 2017 This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer.
Filip Ilie, George Ipate
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Microstructural Effects During Chemical Mechanical Planarization of Copper [PDF]
, 2010 Novel die-stacking schema using through-wafer interconnects require vias to be filled with electroplated Cu, resulting in thick copper films, and requiring an aggressive first-step CMP.
Andersen, Patrick J. +3 more
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Review on modeling and application of chemical mechanical polishing
Nanotechnology Reviews, 2020 With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming
Zhao Gaoyang +6 more
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High-Q-factor Al [subscript 2]O[subscript 3] micro-trench cavities integrated with silicon nitride waveguides on silicon [PDF]
, 2020 We report on the design and performance of high-Q integrated optical micro-trench cavities on silicon. The microcavities are co-integrated with silicon nitride bus waveguides and fabricated using wafer-scale silicon-photonics-compatible processing steps.
Adam, Thomas N. +8 more
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Urea as a complexing agent for selective removal of Ta and Cu in sodium carbonate based alumina chemical–mechanical planarization slurry [PDF]
Journal of the Serbian Chemical Society, 2022 This work reports urea as a promising complexing agent in sodium carbonate-based alumina slurry for chemical–mechanical planarization (CMP) of tantalum and copper. Ta and Cu were polished using Na2CO3 (1 wt. %) with alumina (2 wt.
Shukla Arpita +2 more
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Mechanical Engineering Journal, 2016 A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond.
Yasuhisa SANO +6 more
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