Results 71 to 80 of about 6,682 (189)

Predicting the Material Removal Rate in Chemical Mechanical Planarization Based on Improved Neural Network

IEEE Access
Chemical Mechanical Planarization (CMP) technology in integrated circuit manufacturing plays a critical role in realizing local and global flatness of silicon wafer surface.
Jianchao Wang, Zhaoyang Shi, Pingping Yu, Zhenzhou Wang   +3 more
doaj   +1 more source

Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire

Friction, 2017
The chemical mechanical polishing (CMP) process has become a widely accepted global planarization technology. The abrasive material is one of the key elements in CMP.
Baichun Zhang, Hong Lei, Yi Chen
doaj   +1 more source

Load Assisted Dissolution AND Damage of Copper Surface under Single Asperity Contact: Influence of Contact Loads and Surface Environment [PDF]

, 2012
Copper has become a widely used material in advanced submicron multilevel technologies due to its low resistivity and high electromigration resistance.
Chandra, Abhijit, Chua, Bun-Hiong, Shrotriya, Pranav, Shrotriya, Pranav   +3 more
core   +2 more sources

Atomic-scale chemical mechanical polishing: advances and challenges for the post-Moore’s law era

Materials Futures
Chemical mechanical polishing (CMP) has emerged as a critical technology for local and global surface planarization in integrated circuit manufacturing for decades.
Lifei Zhang, Xinchun Lu
doaj   +1 more source

Studies on optimization method of chemical mechanical planarization models using grid window refinement strategies

Gongneng cailiao yu qijian xuebao
In very large-scale integrated (VLSI) circuit manufacturing, chemical mechanical planarization (CMP) is essential for achieving global surface flatness across multilayer metal interconnects, significantly influencing lithographic precision and electrical
Yu ZHANG, Jianzhong LIU, Biqiu LIU
doaj   +1 more source

Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements

Micromachines, 2018
We investigated the possibility of employing refractive index (RI) measurements for inline incoming slurry control at the point of use (POU), as an alternative to the widespread densitometry method.
Leticia Vazquez Bengochea, Yasa Sampurno, Marcus Kavaljer, Rob Johnston, Ara Philipossian   +4 more
doaj   +1 more source

The Effects of Friction and Temperature in the Chemical-Mechanical Planarization Process. [PDF]

Materials (Basel), 2023
Ilie F, Minea IL, Cotici CD, Hristache AF.   +3 more
europepmc   +1 more source

Modeling Dielectric Erosion in Multi-Step Copper Chemical-Mechanical Polishing [PDF]

, 2004
A formidable challenge in the present multi-step Cu CMP process, employed in the ultra-large-scale integration (ULSI) technology, is the control of wafer surface non-uniformity, which primarily is due to dielectric erosion and Cu dishing.
Chun, Jung-Hoon, Noh, Kyungyoon, Saka, Nannaji   +2 more
core  

Optical Characterization of Industrial Slurries

KONA Powder and Particle Journal, 2015
In this work we focus on the characterization of micro- and nano-powders typically adopted for chemical mechanical polishing, extensively used whenever the global and local planarization of surfaces is required as in nanoelectronic fabs.
Marco Potenza, Tiziano Sanvito, Giuseppe Fazio   +2 more
doaj   +1 more source

Method for one-to-one polishing of silicon nitride and silicon oxide [PDF]

, 2009
The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that ...
Babu, Suryadevara V., Natarajan, Anita
core   +1 more source