Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device [PDF]
Scientific Reports, 2023 Silicon carbide (SiC) wafers have attracted attention as a material for advanced power semiconductor device applications due to their high bandgap and stability at high temperatures and voltages. However, the inherent chemical and mechanical stability of
Ganggyu Lee +7 more
doaj +2 more sources
Chemical Mechanical Polishing of Plasma‐Modified Cu/Polymer Interfaces for Advanced Hybrid Bonding [PDF]
Advanced ScienceHybrid bonding, referring to direct bonding between metal and insulator layers, has become a key technology for next‐generation semiconductor packaging, enabling high‐density interconnects, fast signal transmission, and a compact form factor.
Sukkyung Kang +5 more
doaj +2 more sources
Monodisperse SiO2 Spheres: Efficient Synthesis and Applications in Chemical Mechanical Polishing [PDF]
NanomaterialsThe atomic level polishing of a material surface affects the accuracy of devices and the application of materials. Silica slurries play an important role in chemical mechanical polishing (CMP) by polishing the material surface.
Jinlong Ge +7 more
doaj +2 more sources
Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers [PDF]
MicromachinesThe integration of thick homoepitaxial layers on silicon carbide (SiC) substrates is critical for enabling high-voltage power devices, yet it remains challenged by substrate surface quality and wafer geometry evolution.
Chi-Hsiang Hsieh +7 more
doaj +2 more sources
The Chemical Deformation of a Thermally Cured Polyimide Film Surface into Neutral 1,2,4,5-Benzentetracarbonyliron and 4,4′-Oxydianiline to Remarkably Enhance the Chemical–Mechanical Planarization Polishing Rate [PDF]
NanomaterialsThe rapid advancement of 3D packaging technology has emerged as a key solution to overcome the scaling-down limitation of advanced memory and logic devices.
Man-Hyup Han +10 more
doaj +2 more sources
Effects of Hydrolysis Reaction and Abrasive Drag Force Accelerator on Enhancing Si-Wafer Polishing Rate and Improving Si-Wafer Surface Roughness [PDF]
NanomaterialsTo satisfy the superior surface quality requirements in the fabrication of HBM (High-Bandwidth Memory) and 3D NAND Flash Memory, high-efficiency Si chemical mechanical planarization (CMP) is essential.
Min-Uk Jeon +9 more
doaj +2 more sources
Optimization of Graphical Parameter Extraction Algorithm for Chip-Level CMP Prediction Model Based on Effective Planarization Length [PDF]
MicromachinesAs a planarization technique, chemical mechanical polishing (CMP) continues to suffer from pattern effects that result in large variations in material thickness, which can influence circuit performance and yield.
Bowen Ren +4 more
doaj +2 more sources
Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper
Applied Sciences, 2021 Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles.
Seonghyun Park, Hyunseop Lee
doaj +1 more source
Applied Sciences, 2021 In the fabrication of semiconductors, chemical mechanical polishing (CMP) is an essential wafer-planarization process. For optimal CMP, it is crucial to monitor the texture of the polishing pad; this leads to homogenous planarization of wafers. Hence, we
Eun-Soo Kim, Woo-June Choi
doaj +1 more source
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Advanced Materials Interfaces, 2023 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang +6 more
doaj +1 more source