Integration and electrical evaluation of WS<sub>2</sub> and MoS<sub>2</sub> fets in a 300 mm pilot line. [PDF]
Schram T +15 more
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Haedo Jeong, Dasol Lee, Hyunseop Lee
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Methods for Enhancing the Formation of Hydroxyl Radicals When Polishing Single Crystal SiC. [PDF]
Shi D, Feng K, Zhao T.
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Novel Probability Density Function of Pad Asperity by Wear Effect over Time in Chemical Mechanical Planarization. [PDF]
Jeong S +4 more
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Using the node importance of patent network to evaluate patent relational value. [PDF]
Guo J.
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Heterogeneously-integrated lasers on thin film lithium niobate. [PDF]
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Investigation of the Visible Photocatalytic-Fenton Reactive Composite Polishing Process for Single-Crystal SiC Wafers Based on Response Surface Methodology. [PDF]
Han Z, Ran B, Pan J, Zhuang R.
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Constitutive Model of Secondary Annealing Behavior of Cu-Cu Joints in Cu/SiO<sub>2</sub> Hybrid Bonding. [PDF]
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Effect of Structurally Modified Toluene Diisocyanate-Based Polyurethane Pads on Chemical Mechanical Polishing of 4H Silicon Carbide Substrate. [PDF]
Meng Y, Zhang S, Zhang Z.
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