Results 151 to 160 of about 2,760 (214)

Semiconductor manufacturing wastewater challenges and the potential solutions via printed electronics. [PDF]

iScience
Sandhu S, Zumeit A, Tian Z, Vinciguerra V, Dahiya R.   +4 more
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The Effect of Sodium Hexametaphosphate on the Dispersion and Polishing Performance of Lanthanum-Cerium-Based Slurry. [PDF]

Materials (Basel)
Mei Y, Chen W, Chen X.
europepmc   +1 more source

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SEMI Standards for Consumables for Chemical Mechanical Planarization (CMP)

ECS Meeting Abstracts, 2021
IC manufacturing is a sophisticated multistep process where parameters need to be monitored and controlled very tightly. Chemical-mechanical polishing (CMP) is an important step in IC manufacturing that is required to achieve global and local planarity for subsequent lithography processes.
Alex Tregub, Laura Nguyen
openaire   +1 more source

Planarization Ability of Chemical Mechanical Planarization (Cmp) Processes

MRS Proceedings, 1994
ABSTRACTMethods for determining planarization ability of CMP were explored. Options included film thickness measurements of the dielectric over metal and field, TIR measurements using profilometry, and a combination of the two. The attempt to observe the in situ change in the topography was addressed in two distinct experimental approaches.
Matt Stell, Rahul Jairath, Mukesh Desai, Robert Tolles   +3 more
openaire   +1 more source

Post Chemical Mechanical Planarization (CMP) Cleaning Using Hydrogen Dissolved Water

ECS Meeting Abstracts, 2021
In current semiconductor manufacturing process, especially chemical mechanical manufacturing (CMP) process, ceria nanoparticle dispersed slurry is well known consumable for various CMP processes such as shallow trench isolation (STI), inter layer dielectric (ILD) CMP process, and etc.
Kihong Park, Sang-hyeon Park, Seokjun Hong, Jongsoo Han, Sanghcuk Jeon, Chang min Kim, Taesung Kim   +6 more
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Minimization of chemical-mechanical planarization (CMP) defects and post-CMP cleaning

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1999
Chemical-mechanical planarization (CMP) is inherently a dirty process. Defect minimization in CMP is of great interest to the overall success of the manufacturing of sub-0.20 μm devices. In this article, some general aspects of contamination in CMP and the effect of CMP defects on the manufacturing of devices will be reviewed.
Liming Zhang, Srini Raghavan, Milind Weling   +2 more
openaire   +1 more source

Model-based control for chemical-mechanical planarization (CMP)

Proceedings of the 2004 American Control Conference, 2004
The research described in this tutorial paper involves an effort for physical modeling and model-based sensing and control of CMP systems. A dynamic model of a rotational CMP process is developed, as well as simulation software. This dynamic model is used for feedback control design based on in-situ thickness measurements, as well as run-to-run control
D. de Roover, A. Emami-Naeini, J.L. Ebert   +2 more
openaire   +1 more source

Development of Slurry Formulations for Molybdenum-Chemical Mechanical Planarization (Mo-CMP)

ECS Meeting Abstracts, 2022
As integrated circuit (IC) technology continues to advance, the challenge to extend Moore’s law without sacrificing power density and energy efficiency is critical. One method of achieving these goals is through the utilization of Chemical Mechanical Planarization (CMP) to achieve surface planarity down to angstrom level uniformity.
Abigail L. Dudek, Jason J. Keleher
openaire   +1 more source

Slurry Particle Agglomeration Model for Chemical Mechanical Planarization (CMP)

MRS Proceedings, 2010
AbstractIn this work we propose a particle agglomeration model for chemical mechanical planarization (CMP) under the primary motivation of understanding the creation and behavior of the agglomerated slurry abrasive particles during the CMP process, which are a major cause of defectivity and poor consumable utility due to sedimentation.The proposed ...
Joy Marie Johnson, Duane Boning
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Chemical-Mechanical Planarization (CMP)

2002
Chemical-mechanical planarization (CMP) has found application in semiconductor processing as a method of controlling the planarity of the multiple metal and dielectric layers that form the IC interconnect structure [3.1, 3.2]. Nonplanarity is introduced to the wafer surface at the transistor isolation level and increases as the number of metal layers ...
Christopher L. Borst, William N. Gill, Ronald J. Gutmann   +2 more
openaire   +1 more source