Results 161 to 170 of about 2,760 (214)

Potassium sorbate solutions as copper chemical mechanical planarization (CMP) based slurries

Electrochimica Acta, 2007
Copper depassivation and repassivation characteristics in potassium sorbate solutions, subsequent to mechanical abrading are reported. The identification of copper repassivation kinetics obtained subsequent to mechanical damage of copper protective films formed in sorbate based solutions is discussed.
Abelev, E., Smith, A., Hassel, A., Ein-Eli, Y.   +3 more
openaire   +2 more sources

Advanced Slurry Formulations for New Generation Chemical Mechanical Planarization (CMP) Applications

MRS Proceedings, 2012
ABSTRACTChemical Mechanical Planarization (CMP) is widely used to ensure planarity of metal and dielectric surfaces to enable photolithography and hence multilevel metallization in microelectronics manufacturing. The aim of this study is to establish a fundamental understanding on the dynamic growth of nano-scale protective oxide thin films during CMP ...
Bahar Basim, Ayse Karagoz, Zeynep Ozdemir   +2 more
openaire   +1 more source

Development of “Tunable” Gallium Nitride (GaN) Chemical Mechanical Planarization (CMP) Slurry Formulations

ECS Meeting Abstracts, 2022
Wide band gap (WBG) semiconductors have become of great interest in order to extend Moore’s Law beyond the limitations of current Si IC technology. WBG material, more specifically gallium nitride (GaN), is known to operate at greater switching speeds, temperatures, and frequencies leading to enhanced processing performance.
Kiana A. Cahue, Jason J. Keleher
openaire   +1 more source

Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics

Journal of Semiconductors, 2013
The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing (CMP) process from the perspective of chemical mechanical kinetics. Different from the international dominant acidic copper slurry, the copper slurry used in this research adopted the way of alkaline technology based on complexation.
Shengli Wang, Kangda Yin, Xiang Li, Hongwei Yue, Yunling Liu   +4 more
openaire   +1 more source

Study on the effect of residual ceria slurry on chemical mechanical planarization (CMP)

Microelectronic Engineering, 2021
Abstract The effect of residual ceria slurry on a pad was investigated to improve the cleaning efficiency while maintaining the removal rate of chemical mechanical planarization (CMP). This combined process consists of two sequential steps: polishing with slurry, then polishing with residual slurry and cleaning with deionized water (DIW).
Junho Yun, Donggeon Kwak, Juhwan Kim, Taesung Kim   +3 more
openaire   +1 more source

Effects of pump-induced particle agglomeration during chemical mechanical planarization (CMP)

Proceedings of International Conference on Planarization/CMP Technology 2014, 2014
In this study, the effects of large particle in chemical mechanical planarization (CMP) slurry were investigated on slurry distribution system, which utilizes a pumping device to circulate CMP slurry. Three different types of pumps (e.g., bellows, diaphragm and magnetically levitated centrifugal pump) were evaluated their performance such as generation
Young-Gil Seo, Jin-Goo Park, Periyasamy Elaiyaraju   +2 more
openaire   +1 more source

Modeling and Control of Surface Quality in Chemical Mechanical Planarization (CMP)

Volume 2: Mechatronics; Estimation and Identification; Uncertain Systems and Robustness; Path Planning and Motion Control; Tracking Control Systems; Multi-Agent and Networked Systems; Manufacturing; Intelligent Transportation and Vehicles; Sensors and Actuators; Diagnostics and Detection; Unmanned, Ground and Surface Robotics; Motion and Vibration Control Applications, 2017
Obtaining uniform surface finish across large length scales is extremely important in Chemical Mechanical Planarization (CMP). Existing control strategies use results from model simulations to propose open-loop control strategies to reduce the step height on surfaces being polished.
Pavan Poosarla, Hamid Emadi, Abhijit Chandra, Sourabh Bhattacharya   +3 more
openaire   +1 more source

Chemical Mechanical Planarization (CMP) Metrology for 45∕32 nm Technology Generations

AIP Conference Proceedings, 2007
In‐plane geometrical defects on wafer surfaces following Chemical Mechanical Planarization (CMP) processing in the lateral millimeter range and in vertical dimensions in the nanometer range are of increasing importance. They will become a severe yield limiting factor in the 32 nm generations and below.
A. Nutsch, L. Pfitzner, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula   +8 more
openaire   +1 more source

Advanced chemical mechanical planarization (CMP) process for copper interconnects

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2002
Chemical mechanical planarization (CMP) of copper dual Damascene is described. Dishing of the copper layer can be controlled by the CMP employing non-abrasive MnO/sub 2/ slurry. Removal rate ratio of the Cu/barrier layer can be reduced from 2.8 to unity with doping of antioxide additive in the slurry.
openaire   +1 more source

Submicron particle removal in post-oxide chemical-mechanical planarization (CMP) cleaning

Applied Physics A: Materials Science & Processing, 1999
Particle removal models for soft-pad buffing (the second-step polishing with DI water) and mechanical brush-cleaning processes are proposed and the removal forces are evaluated and compared with the average particle adhesion force to the oxide wafer surface resulting from the primary polishing (the first-step polishing with slurry).
F. Zhang, A. Busnaina
openaire   +1 more source