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Slurry components in metal chemical mechanical planarization (CMP) process: A review
International Journal of Precision Engineering and Manufacturing, 2016Chemical mechanical planarization (CMP) is a wet polishing technique employed to smooth the surface of various materials using a combination of chemical and mechanical forces to achieve finer and longer lines on semiconductor devices. Among the published papers related to CMP, the CMP metal slurry has been the primary focus, and it appears to be the ...
Dasol Lee, Hyunseop Lee, Haedo Jeong
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An analytical dishing and step height reduction model for chemical mechanical planarization (CMP)
IEEE Transactions on Semiconductor Manufacturing, 2002An analytical model for dishing and step height reduction in chemical mechanical planarization (CMP) of copper is presented. The model is based on the assumption that at the feature scale, high areas on the wafer experience higher pressure than low areas. The slurry is assumed to be Prestonian. The model delineates how dishing and step height reduction
Guanghui Fu, Abhijit Chandra
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ECS Meeting Abstracts, 2023
Wide band gap (WBG) semiconductors have become of great interest to extend Moore’s Law beyond the limitations of current Si IC technology. More specifically, WBG materials (i.e., Silicon Carbide and Gallium Nitride) have been shown to increase performance due to their intrinsic properties (i.e., high capacitance, thermal stability, and wear ...
Joseph L. Powell +3 more
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Wide band gap (WBG) semiconductors have become of great interest to extend Moore’s Law beyond the limitations of current Si IC technology. More specifically, WBG materials (i.e., Silicon Carbide and Gallium Nitride) have been shown to increase performance due to their intrinsic properties (i.e., high capacitance, thermal stability, and wear ...
Joseph L. Powell +3 more
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Step height removal mechanism of chemical mechanical planarization (CMP) for sub-nano-surface finish
Wear, 2010Abstract The step height reduction mechanism of chemical mechanical planarization (CMP) was studied to increase the removal rate of ceria (CeO2) abrasive, which is based on slurry application to high aspect ratio patterns. Four kinds of nano-abrasives at 0.5 wt% abrasive concentration were prepared, including jet-milled ceria, ball-milled ceria ...
Ji Chul Yang +4 more
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Moore's Law Scaling and Chemical Mechanical Planarization (CMP)
ECS Meeting AbstractsSince the invention of the first integrated circuit in 1958, chemistry and materials have played a critical role in semiconductor process technologies, which has led to an exponential growth of transistors packed into circuits. Decades ago, Gordon Moore posited there would be a doubling of components every two years (revised from his original ...
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Fabrication of the HTS multilayer structure using Chemical Mechanical Planarization (CMP)
1999We fabricated the HTS multilayer structure with crossover and via structure for interconnection between the base and top YBCO films using CMP technology and studied the electrical properties of the multilayer structure. While the surface roughness of the upper STO film due to the precipitates on the base YBCO film was decreased below 1/10 and those of ...
Hiroshi Takashima +2 more
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Electrochimica Acta, 2007
Abstract Copper depassivation and repassivation characteristics in potassium sorbate solutions, subsequent to mechanical abrading are reported. The identification of copper repassivation kinetics obtained subsequent to mechanical damage of copper protective films formed in sorbate based solutions is discussed.
Esta Abelev +3 more
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Abstract Copper depassivation and repassivation characteristics in potassium sorbate solutions, subsequent to mechanical abrading are reported. The identification of copper repassivation kinetics obtained subsequent to mechanical damage of copper protective films formed in sorbate based solutions is discussed.
Esta Abelev +3 more
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Redox Activation of Diamond Substrates for Advanced Chemical Mechanical Planarization (CMP)
ECS Meeting AbstractsDiamond is gaining traction as a wide band gap substrate (WBG) for high-powered devices due to its intrinsic properties (i.e., high hardness/bulk modulus, thermal conductivity, light transmittance, band gap, chemical stability, and nitrogen-vacant center). Chemical Vapor Deposition (CVD) is regularly used to achieve diamond substrate growth, but the
Kiersten M. Smith +3 more
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ECS Meeting Abstracts, 2017
Chemical Mechanical Planarization (CMP) is a key enabling process used in semiconductor manufacturing to achieve local and global planarization of layers. Contemporary CMP process use nanoparticle slurries for the chemical and mechanical removal of material. As traditional silicon nears its scaling limits, next-generation devices will require the use
Steven Crawford, Shyam Aravamudhan
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Chemical Mechanical Planarization (CMP) is a key enabling process used in semiconductor manufacturing to achieve local and global planarization of layers. Contemporary CMP process use nanoparticle slurries for the chemical and mechanical removal of material. As traditional silicon nears its scaling limits, next-generation devices will require the use
Steven Crawford, Shyam Aravamudhan
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ECS Journal of Solid State Science and Technology, 2015
The role of homologous linear aliphatic polyamines as additives in Cu CMP slurries was investigated. We show that, in addition to forming stable complexes with copper ions in solution, the polyamines also interact with the copper metal preventing its corrosion.
Dinusha P. Karunaratne, Dan V. Goia
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The role of homologous linear aliphatic polyamines as additives in Cu CMP slurries was investigated. We show that, in addition to forming stable complexes with copper ions in solution, the polyamines also interact with the copper metal preventing its corrosion.
Dinusha P. Karunaratne, Dan V. Goia
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