Results 11 to 20 of about 2,760 (214)

Role of the Oxidation State in Cobalt Chemical Mechanical Planarization

open access: yesMetalMat
Cobalt (Co) is a promising next‐generation contact metal to replace tungsten for the system‐large‐scale integration devices beyond the 5 nm technology node due to its low resistivity and high gap‐filling capability at high aspect ratios.
Ganggyu Lee   +7 more
doaj   +2 more sources

Analysis of Correlation between Pad Temperature and Asperity Angle in Chemical Mechanical Planarization

open access: yesApplied Sciences, 2021
Chemical mechanical planarization (CMP) is a technology widely employed in device integration and planarization processes used in semiconductor fabrication. In CMP, the polishing pad plays a key role both mechanically and chemically.
Seonho Jeong   +3 more
doaj   +1 more source

Correlation between pattern density and linewidth variation in silicon photonics waveguides [PDF]

open access: yes, 2020
We describe the correlation between the measured width of silicon waveguides fabricated with 193 nm lithography and the local pattern density of the mask layout.
Bogaerts, Wim   +3 more
core   +1 more source

Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO2-Abrasive Dispersant Stability Enhancement and Related Tungsten-Film Surface Chemical–Mechanical Planarization

open access: yesNanomaterials, 2021
For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive
Seong-In Kim   +7 more
doaj   +1 more source

Suppression of Dissolution Rate via Coordination Complex in Tungsten Chemical Mechanical Planarization

open access: yesApplied Sciences, 2022
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP) in the metal gate structures (e.g., buried gates, replacement metal gates) and via contact in the middle of line (MOL) process for sub−7 nm ...
Kangchun Lee, Jihoon Seo
doaj   +1 more source

Dynamic Pad Surface Metrology Monitoring by Swing-Arm Chromatic Confocal System

open access: yesApplied Sciences, 2020
This study aims to develop a dynamic pad monitoring system (DPMS) for measuring the surface topography of polishing pad. Chemical mechanical planarization/polishing (CMP) is a vital process in semiconductor manufacturing. The process is applied to assure
Chao-Chang A. Chen   +4 more
doaj   +1 more source

Scratch formation and its mechanism in chemical mechanical planarization (CMP) [PDF]

open access: yesFriction, 2013
Abstract Chemical mechanical planarization (CMP) has become one of the most critical processes in semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and tribo-mechanical/chemical ...
Kwon, Tae-Young   +2 more
openaire   +1 more source

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

open access: yesMicromachines, 2022
Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage.
Chi-Hsiang Hsieh   +5 more
doaj   +1 more source

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

open access: yesLubricants, 2017
This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer.
Filip Ilie, George Ipate
doaj   +1 more source

Microstructural Effects During Chemical Mechanical Planarization of Copper [PDF]

open access: yes, 2010
Novel die-stacking schema using through-wafer interconnects require vias to be filled with electroplated Cu, resulting in thick copper films, and requiring an aggressive first-step CMP.
Andersen, Patrick J.   +3 more
core   +2 more sources

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