Results 21 to 30 of about 2,760 (214)

Particle Technology in Chemical Mechanical Planarization

KONA Powder and Particle Journal, 2014
In order to keep pace with Moore’s law, multilevel metallization has become the process of choice. Having a planar wafer surface before every successive step in multilevel metallization is important. The Chemical
Kalyan S. Gokhale, Brij M. Moudgil
doaj   +1 more source

Demonstration of multiple-wavelength-band photonic integrated circuits using a silicon and silicon nitride 2.5D integration method. [PDF]

Nanophotonics
Abstract Conventional photonic integrated circuits (PICs) are fundamentally limited by single‐wavelength‐band operation. To transcend this barrier, we introduce a multiple‐wavelength‐band platform using a 2.5D integration scheme that monolithically combines silicon and silicon nitride waveguides side‐by‐side on a single chip. This architecture natively
Fu M, Qiu H, Zhang H, Chen X, Qi J, Zhang Y, Xu Y, Liu S, Gu N, Yu H, Yi W, Li X, Guan X.   +12 more
europepmc   +2 more sources

Integration of InP and InGaAs on 300 mm Si wafers using chemical mechanical planarization [PDF]

, 2016
Integration of III-V high mobility channel materials in complementary metal oxide semiconductors (CMOS) and III-V photonic materials for integrated light sources on Si substrates requires low defect density III-V buffer layers in order to enable ...
Orzali, Tommaso, Petro, Benjamin, Satyavolu, PapaRao, Vert, Alexey, Whitener, Glenn   +4 more
core   +2 more sources

Slurry Design for Chemical Mechanical Polishing

KONA Powder and Particle Journal, 2014
Chemical Mechanical Polishing (CMP) process is widely used in the microelectronics industry for planarization of metal and dielectric layers to achieve multi-layer metallization.
G. Bahar Basim, Brij M. Moudgil
doaj   +1 more source

Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical–mechanical-planarization polishing-rate

Scientific Reports, 2022
In this study, the chemical decomposition of a polyimide-film (i.e., a PI-film)-surface into a soft-film-surface containing negatively charged pyromellitic dianhydride (PMDA) and neutral 4,4′-oxydianiline (ODA) was successfully performed.
Gi-Ppeum Jeong, Jun-Seong Park, Seung-Jae Lee, Pil-su Kim, Man-Hyup Han, Seong-Wan Hong, Eun-Seong Kim, Jin-Hyung Park, Byoung-Kwon Choo, Seung-Bae Kang, Jea-Gun Park   +10 more
doaj   +1 more source

Study on the Preparation and Performance of Self-Regressive Fixed Abrasive Chemical Mechanical Polishing Pad

Machines, 2022
Chemical mechanical polishing (CMP) technology is one of the key technologies to realize the global planarization of semiconductor wafer surfaces. With the increasing popularity and universality of its application, more and higher requirements are put ...
Jianguo Yao, Haixu Liu, Zhankui Wang, Yongwei Zhu, Jianxiu Su   +4 more
doaj   +1 more source

High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

Mechanical Engineering Journal, 2016
A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond.
Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI   +6 more
doaj   +1 more source

Hybrid CMP Slurry Supply System Using Ionization and Atomization

Applied Sciences, 2021
Chemical mechanical planarization (CMP) is frequently used in semiconductor manufacturing to polish the surfaces of multiple layers in a wafer. The CMP uses a slurry that aids in fabricating a smooth surface by removing the excess materials.
Hoseong Jo, Da Sol Lee, Seon Ho Jeong, Hyun Seop Lee, Hae Do Jeong   +4 more
doaj   +1 more source

Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate

Nanomaterials, 2022
To scale down semiconductor devices to a size less than the design rule of 10 nm, lithography using a carbon polymer hard-mask was applied, e.g., spin-on-carbon (SOC) film.
Jun-Myeong Lee, Jong-Chan Lee, Seong-In Kim, Seung-Jae Lee, Jae-Yung Bae, Jin-Hyung Park, Jea-Gun Park   +6 more
doaj   +1 more source

Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation [PDF]

, 2011
: Electronic devices based on tunnel junctions require tools able to accurately control the thickness of thin metal and oxide layers on the order of the nanometer.
Beaumont, A., Beauvais, Jacques, Drouin, Dominique, Droulers, G.   +3 more
core   +2 more sources