Results 61 to 70 of about 2,760 (214)

High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs

IEEE Journal of the Electron Devices Society, 2023
This paper proposed a fabrication of p-type Germanium (Ge) tri-gate field-effect transistors (Tri-gate FETs) via green nanosecond laser crystallization (GNSLC) and counter doping (CD). By using the GNSLC, the nano-crystalline-Ge (nc-Ge) with a grain size
Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, Kuan-Neng Chen   +7 more
doaj   +1 more source

Understanding UV‐Induced Degradation Mechanisms in SHJ Solar Cells and Their Reversibility: The Role of Hydrogen and Doping

Progress in Photovoltaics: Research and Applications, EarlyView.
This study investigates the UV‐induced degradation of silicon heterojunction cell precursors by isolating the impact of subcell layers under controlled UVA and UVB irradiation. Front hydrogenated amorphous silicon (i/n)a‐Si:H selective layers are identified as key degradation sites, leading to significant losses in minority carrier lifetime and iVoc ...
Hugo Lajoie, Frédéric Jay, Maxime Babics, Tristan Gageot, Romain Couderc, Névine Rochat, Hélène Coudert‐Alteirac, Sandrine Therias   +7 more
wiley   +1 more source

Motor Power Signal Analysis for End-Point Detection of Chemical Mechanical Planarization

Micromachines, 2017
In the integrated circuit (IC) manufacturing, in-situ end-point detection (EPD) is an important issue in the chemical mechanical planarization (CMP) process.
Hongkai Li, Xinchun Lu, Jianbin Luo
doaj   +1 more source

Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Microsystems & Nanoengineering, 2023
The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) and annealing severely affect the ...
Qimeng Sun, Dekun Yang, Tianjian Liu, Jianhong Liu, Shizhao Wang, Sizhou Hu, Sheng Liu, Yi Song   +7 more
doaj   +1 more source

Monolithic 3D Nanoelectrode Arrays on CMOS Circuitry for Scalable, High‐Resolution Neural Recording

Small, EarlyView.
A CMOS‐integrated in vitro electrophysiology platform with 26,400 3D nanoelectrodes enables high‐resolution extracellular recordings with enhanced spatial sensitivity. Wafer‐scale, low‐temperature post‐fabrication monolithic integration of nanoelectrodes on foundry‐made CMOS chips preserves circuit functionality and electrical performance.
Aziliz Lecomte, Laurent Mazenq, Marie‐Charline Blatché, Aurélie Lecestre, Guilhem Larrieu   +4 more
wiley   +1 more source

Research of Vertical via Based on Silicon, Ceramic and Glass

Micromachines, 2023
With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial.
Wenchao Tian, Sixian Wu, Wenhua Li
doaj   +1 more source

Interaction Effects of Slurry Chemistry on Chemical Mechanical Planarization of Electroplated Copper [PDF]

, 2004
Recent studies have been conducted investigating the effects of slurry chemistry on the copper CMP process. Slurry pH and hydrogen peroxide concentration are two important variables that must be carefully formulated in order to achieve desired removal ...
Imonigie, Jerome A., Miranda, Peter A., Moll, Amy J.   +2 more
core   +1 more source

Copper Passivity in Carbonate Base Solutions and its Application to Chemical Mechanical Planarization (CMP) [PDF]

ECS Meeting Abstracts, 2006
Abstract not Available.
E. Abelev, D. Starosvetsky, M. Auinat, Y. Ein-Eli   +3 more
openaire   +1 more source

Three‐Dimensional Heterogeneous Bonding for High‐Density and Low‐Noise TMR Sensing Arrays

Advanced Science, Volume 13, Issue 13, 3 March 2026.
This study demonstrates a three‐dimensional heterogeneous bonding approach to fabricate compact TMR sensing units with double junction numbers and improved magnetic performance. Optimized Au─Au bonding and angled etching improve device integrity, noise characteristics, and magnetoresistance.
Zi'ang Han, Zhenhu Jin, Chenglong Zhang, Jiamin Chen   +3 more
wiley   +1 more source

Atomic-scale chemical mechanical polishing: advances and challenges for the post-Moore’s law era

Materials Futures
Chemical mechanical polishing (CMP) has emerged as a critical technology for local and global surface planarization in integrated circuit manufacturing for decades.
Lifei Zhang, Xinchun Lu
doaj   +1 more source