Results 71 to 80 of about 2,760 (214)

Highly Sensitive Heterojunction‐Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm

open access: yesAdvanced Science, Volume 13, Issue 17, 23 March 2026.
This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan   +14 more
wiley   +1 more source

Modeling Dielectric Erosion in Multi-Step Copper Chemical-Mechanical Polishing [PDF]

open access: yes, 2004
A formidable challenge in the present multi-step Cu CMP process, employed in the ultra-large-scale integration (ULSI) technology, is the control of wafer surface non-uniformity, which primarily is due to dielectric erosion and Cu dishing.
Chun, Jung-Hoon   +2 more
core  

Photonic Unitary Circuits for Quantum Information Processing

open access: yesAdvanced Quantum Technologies, Volume 9, Issue 3, March 2026.
Unitary transformations are the cornerstone of quantum computing, enabling reversible manipulation of quantum states. This review evaluates photonic waveguide architectures as an evolving solution for quantum computing, exploiting the unique properties of photons. It investigates current theoretical frameworks, material platforms, and design strategies.
Kevin Zelaya   +6 more
wiley   +1 more source

Review on atomistic and quantum mechanical simulation approaches in chemical mechanical planarization

open access: yesApplied Surface Science Advances
Chemical mechanical planarization (CMP) faces critical challenges including non-uniform material removal, surface defect generation, and complex tribochemical interactions that limit process control at advanced semiconductor nodes.
Seokgyu Ryu   +5 more
doaj   +1 more source

Analysis of infrared optical polishing effluents and reduction of COD and TSS levels by ultrafiltration and coagulation/flocculation [PDF]

open access: yes, 2014
Samples of polishing effluent produced during infrared optics manufacture were analyzed. Their particle size, composition, Zeta potential, chemical oxygen demand (COD), total suspended solids (TSS), and settleable solids were determined.
Durazo-Cardenas, Isidro Sergio   +2 more
core   +1 more source

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling

open access: yesSmall, Volume 22, Issue 17, 20 March 2026.
AI‐enabled semiconductor scaling law. Virtualization emerges as an AI‐enabled scaling law for semiconductors, where progress depends on replacing physical iteration with credible virtual evidence. Surrogate modeling accelerates design‐space exploration, digital twins virtualize process learning, and defect‐to‐reliability inference advances ...
Zeheng Wang   +8 more
wiley   +1 more source

Non-Uniformity of Wafer and Pad in CMP: Kinematic Aspects of View [PDF]

open access: yes
[[abstract]]In this paper, we analyze the non-uniformity of sliding distance on both wafer and polishing pad from kinematic point of view. Using the Fourier series expansion, we can show that in steady state the non-uniformity is determined by the ratio ...
[[alternative]]田豐, Tyan, Feng
core   +1 more source

A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions [PDF]

open access: yes, 2017
: We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic single electron transistors, silicon ...
Abdelkader Souifi   +9 more
core   +5 more sources

Site‐Selective Polyvinylpyrrolidone Adsorption Behavior for 3D Heterogeneous Integration

open access: yesAdvanced Materials Technologies, Volume 11, Issue 4, 19 February 2026.
Site‐selective adsorption behavior is presented with polyvinylpyrrolidone on a Cu/SiO2 pattern wafer, which enables 3D heterogeneous integration. Owing to the site‐selective adsorption behavior and its corresponding electrostatic interaction between SiO2 nanoparticles and the Cu surface, the selectivity of Cu/SiO2 is arbitrarily controlled ...
Hosin Hwang   +9 more
wiley   +1 more source

Chemical Mechanical Paired Grinding [PDF]

open access: yes, 2011
Chemical Mechanical Planarization (CMP) is a polishing process that planarizes a surface at both a local and global scale. The multi scale planarization capabilities of CMP are used extensively in the fabrication of Integrated Circuits (IC).
Asplund, David Thomas
core   +2 more sources

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