Results 81 to 90 of about 2,760 (214)
Advanced Materials Technologies, Volume 11, Issue 4, 19 February 2026.An LCD‐compatible complementary liquid‐crystal metasurface delivers dual‐band, dual‐polarized Ka‐band wavefront control with millisecond switching via a 10‐µm LC gap. Interlaced patch/slot pairs enable independent phase tuning at 28 and 38 GHz, while strategic 45° slot rotation suppresses parasitic resonances. Measurements on a 160 × 160‐cell prototype
Daehyeon Kim +4 more
wiley +1 more source
Gongneng cailiao yu qijian xuebaoIn very large-scale integrated (VLSI) circuit manufacturing, chemical mechanical planarization (CMP) is essential for achieving global surface flatness across multilayer metal interconnects, significantly influencing lithographic precision and electrical
Yu ZHANG, Jianzhong LIU, Biqiu LIU
doaj +1 more source
Method for one-to-one polishing of silicon nitride and silicon oxide [PDF]
, 2009 The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that ...
Babu, Suryadevara V., Natarajan, Anita
core +1 more source
Chemical Mechanical Planarization and Old Italian Violins
Micromachines, 2018 Previous studies have shown that spectral analysis based on force data can elucidate fundamental physical phenomena during chemical mechanical planarization (CMP). While it has not been literally described elsewhere, such analysis was partly motivated by
Ara Philipossian +2 more
doaj +1 more source
Process development of silicon-silicon carbide hybrid structures for micro-engines (January 2002) [PDF]
, 2002 MEMS-based gas turbine engines are currently under development at MIT for use as a button-sized portable power generator or micro-aircraft propulsion sources. Power densities expected for the micro-engines require very high rotor peripheral speeds of 300-
Choi, D. +2 more
core
A Scratch Intersection Model of Material Removal During Chemical Mechanical Planarization (CMP)
Journal of Manufacturing Science and Engineering, 2004 A scratch intersection based material removal mechanism for CMP processes is proposed in this paper. The experimentally observed deformation pattern by SEM and the trends of the measured force profiles (Che et al., 2003) reveal that, for an isolated shallow scratch, the material is mainly plowed sideway along the track of the abrasive particle with no ...
Che, Wei +3 more
openaire +3 more sources
Advanced Photonics Research, Volume 6, Issue 12, December 2025.Tilted‐view scanning electron microscope images show arrays of self‐aligned etched GaAs triangular pillars hosting single quantum dots. The main image captures the as‐fabricated morphology prior to dielectric coating, highlighting their uniform geometry.
Gediminas Juska +10 more
wiley +1 more source
A Mechanical Model for Erosion in Copper Chemical-Mechanical Polishing [PDF]
, 2003 The Chemical-mechanical polishing (CMP) process is now widely employed in the ultralarge scale integration chip fabrication. Due to the continuous advances in semiconductor fabrication technology and decreasing sub-micron feature size, the ...
Chun, Jung-Hoon +2 more
core
ElectrochemThe manufacturing of integrated circuits involves multiple steps of chemical mechanical planarization (CMP) involving different materials. Mitigating CMP-induced defects is a main requirement of all CMP schemes.
Kassapa U. Gamagedara, Dipankar Roy
doaj +1 more source
ElectrochemMolybdenum (Mo) is currently considered as a potential diffusion barrier material for copper (Cu) interconnects, and these interconnect structures are generally processed using the technique of chemical mechanical planarization (CMP).
Kassapa U. Gamagedara, Dipankar Roy
doaj +1 more source