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Sub-THz communication systems: pushing the capabilities of silicon. [PDF]
Commun EngGruber J +6 more
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Sensitivity Characteristics of Inverse Class-E Power Amplifier
IEEE Transactions on Circuits and Systems Part 1: Regular Papers, 2007In this paper, an analysis is performed in order to determine the effects that variations in circuit component values, frequency, and duty cycle have on the performance of the newly introduced inverse Class-E amplifier. Analysis of the inverse Class-E amplifier under the generalized condition of arbitrary duty cycle is performed and it is shown that ...
Vincent Fusco
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A CMOS class-E Power Amplifiers with Power Control
2007 IEEE International Symposium on Circuits and Systems, 2007In this paper, a CMOS class-E power amplifier with power control is presented. Its output power could be varied over a broad range with high efficiency by utilizing the combination of the parallel amplification technique and the drain modulation technique.
Tongqiang Gao +3 more
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Continuous Class-E Power Amplifier Modes
IEEE Transactions on Circuits and Systems II: Express Briefs, 2012In this brief, a continuum of novel closed-form solutions is derived for class-E power amplifiers (PAs). It is analytically proven that the class-E zero voltage/zero voltage derivative switching conditions can be satisfied for an arbitrarily selected reactive second harmonic switch impedance (Z2S).
Mustafa Ozen, Rik Jos, Christian Fager
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An RF Choke-Less Class E Power Amplifier
IEEE Transactions on Circuits and Systems II: Express Briefs, 2020An RF-choke (RFC) is a crucial but difficult-to-realize component of all Class-E power amplifiers (PAs). A Class-DE PA does not require an RFC but requires two non-overlapping clocks for its operation. This brief presents an RFC-less Class-E PA which operates with a single 50% duty-cycled clock.
Gagan Deep Singh, Nagarjuna Nallam
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CMOS RF class-E power amplifier with power control
2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS), 2016This paper proposes a 2.2 GHz CMOS Power Amplifier (PA) useful to S-Band applications with an effective 3-bit output power control for efficiency improvement. It uses an input transformer to reduce ground bounce effects and operates around 1 W of output power.
Diogo B. Santana +3 more
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Power-Combining Class-E Amplifier With Finite Choke
IEEE Transactions on Circuits and Systems I: Regular Papers, 2011A recently introduced power-combining scheme for a Class-E amplifier is, for the first time, experimentally validated in this paper. A small value choke of 2.2 nH was used to substitute for the massive dc-feed inductance required in the classic Class-E circuit.
Mury Thian +2 more
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Design of class-E power amplifier for capacitive power transfer system
Microelectronics Journal, 2018Abstract High frequency power source is an indispensable part of capacitive power transfer system, and its performance plays an essential role in the overall system. Considering that class-E power amplifier is a prominent switched-mode power amplifier, and its power conversion efficiency can reach nearly 100%, theoretically.
Yanzhou Sun, Xiaoxian Liu
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Class-E CMOS power amplifiers for RF applications
Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03., 2003CMOS radio frequency class-E power amplifiers (PA) for GMSK/GFSK modulations have been designed and fabricated using 0.25/0.35/spl mu/m technologies. The operating frequencies are centred at 1.2GHz and 2.65GHz with 24-26dBm output power. Mode locking techniques are employed for both designs, in order to reduce the driving requirement.
Tang Tat Hung, Mourad N. El-Gamal
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